SAMWIN SW20N60 N-channel Power MOSFET TO-3P Features BVDSS : 600V ID ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 20A* RDS(ON) : 0.3ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge. 3 Order Codes Item 1 Sales Type SW W 20N60 Marking SW20N60 Package TO-3P Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage SW20N60 Unit 600 V Continuous Drain Current (@TC=25oC) 20 A Continuous Drain Current (@TC=100oC) 14 A (note 1) 80 A IDM Drain current pulsed VGS Gate to Source Voltage ± 30 V EAS Single pulsed Avalanche Energy (note 2) 1100 mJ EAR Repetitive Avalanche Energy (note 1) 30 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns 300 W 2.38 W/oC -55 ~ + 175 oC 300 oC PD TSTG, TJ TL Total power dissipation Derating Factor above (@TC=25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Value Parameter Min. Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Mar. 2011. Rev. 2.0 Typ. Unit Max. 0.42 oC/W 0.24 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. oC/W 40 oC/W 1/7 SAMWIN SW20N60 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 600 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - - - V/oC - 10 uA Drain to source leakage current VDS=600V, VGS=0V - IDSS VDS=480V, TC=125oC - - 100 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 3.0 - 5.0 V 0.3 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 10A Dynamic characteristics Ciss Input capacitance - 3600 Coss Output capacitance - 500 Crss Reverse transfer capacitance - 45 td(on) Turn on delay time - 140 - 430 - 310 Fall time - 280 Qg Total gate charge - 70 100 Qgs Gate-source charge - 20 - Qgd Gate-drain charge - 35 - Min. Typ. Max. Unit - - 20 A - - 80 A tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=300V, ID=20A, RG=25Ω VDS=600V, VGS=10V, ID=20A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=20A, VGS=0V - - 1.5 V Trr Reverse recovery time - 420 - ns Qrr Breakdown voltage temperature IS=20A, VGS=0V, dIF/dt=100A/us. - 4.7 - uC ※. Notes 1. Repetitive rating : pulse width limited by junction temperature. 2. L = 6.2mH, IAS = 20.0A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 20A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW20N60 Fig. 1. On-state characteristics Top : VGS 15.0V 10.0V 9.0V 8.0V 6.0V 5.0V 1 10 ID, Drain Current [A] 1 10 ID, Drain Current [A] Fig. 2. Transfer characteristics Bottom : 0 10 o 150 C 0 10 o 25 C o -55 C *. Notes : 1. 250¥ىs Pulse Test o 2. TC = 25 C -1 10 *. Notes : 1. VDS = 50V 2. 250us Pulse Test -1 10 -1 0 10 2 1 10 10 3 4 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [¥]ط 2.5 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0.5 1 10 o 150 C o 25 C 0 10 *. Notes : 1. VGS = 0V o ، طNote : TJ = 25 C 2. 250us Pulse Test -1 10 0.0 0 5 10 15 20 0.2 25 0.4 0.6 Fig. 5. Capacitance characteristics (Non-Repetitive) 12 Ciss=Cgs+Cgd(Cds=shorted) 2750 Capacitance [pF] VGS, Gate-Source Voltage [V] Coss=Cds+Cgd Crss=Cgd 2500 2250 *. Notes : 1. VGS = 0V 2000 Ciss 2. f=1MHz 1500 1250 Coss 750 500 1.2 Fig. 6. Gate charge characteristics 3000 1000 1.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] 1750 0.8 Crss VDS = 120V 10 VDS = 300V VDS = 520V 8 6 4 2 *. Note : ID = 10.0A 250 0 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] 35 40 0 10 20 30 40 QG, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW20N60 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 RDS(on), (Normalized) 1.1 1.0 0.9 *. Notes : 1. VGS = 0 V 2. ID = 250 uA 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 *. Notes : 1. VGS = 10 V 0.5 2. ID = 5.0 A 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 2 10 10 Operation in This Area is Limited by R DS(on) 8 100 s 1 ID, Drain Current [A] 10 ID' Drain Current [A] 200 o o 6 4 1 ms 10 ms DC 0 10 -1 10 *. Notes : o 1. TC = 25 C 2 o 2. TJ = 150 C 0 25 3. Single Pulse -2 10 50 75 100 125 0 1 10 150 2 10 10 3 10 VDS, Drain-Source Voltage [V] o TC' Case Temperature [ C] Fig. 11. Transient thermal response curve 0 Z¥èJC (t), Thermal Response 10 D=0.5 *. Notes : o 1. Z¥èJC(t) = 0.85 C/W Max. 0.2 -1 2. Duty Factor, D=t1/t2 0.1 10 3. TJM - TC = PDM * Z¥èJC(t) 0.05 t1 0.02 0.01 t2 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW20N60 Fig. 1. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 2. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 3. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW20N60 Fig. 4. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW20N60 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7