LL352 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications Extreme fast switches Absolute Maximum Ratings (Tj = 25OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum Peak Forward Current IFM 200 mA Surge Current (10ms) IFSM 1 A Average Forward Current Io 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range Ts -55 … +125 O C C Characteristics at Tj = 25 OC Parameter Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time Test Conditions Symbol Min Typ Max Unit IF = 1mA VF - 0.62 - V IF = 10mA VF - 0.75 - V IF = 100mA VF - 0.98 1.2 V VR = 30V IR - - 0.1 μA VR = 80V IR - - 0.5 μA VR = 0, f = 1MHZ CT - 0.5 3 pF IF = 10mA trr - 1.6 4 ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/02/2003 LL352 IR - VR IF - V F REVERSE CURRENT IR (A) IF (A) m FORWARD CURRENT m 。 Ta=100 C m 。 Ta=100 C n n n n FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) CAPACITANCE CT ( PF ) C T - VR REVERSE VOLTAGE VR (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/02/2003