ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Power Dissipation Ptot 250 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/07/2002 ST 2SA733 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 120 - 240 - P hFE 200 - 400 - L hFE 350 - 700 - -V(BR)CBO 60 - - V -V(BR)CEO 50 - - V -V(BR)EBO 5 - - V -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCE(sat) - 0.18 0.3 V -VBE(on) 0.5 0.62 0.8 V fT 50 180 - MHz COB - 2.8 - pF F - 6 20 dB DC Current Gain at -VCE=6V, -IC=1mA Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -VCE=6V, -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.3mA at f=100Hz, RS=10KΩ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/07/2002 ST 2SA733 I C - VBE Total power dissipation vs. ambient temperature -200 300 VCE=-6V -100 Free air 250 IC - mA P tot (mW) Ta=75 C 200 150 50 C -10 25 C 0 C 100 -25 C -1 50 0 25 75 50 100 -0.1 -0.4 -0.5 150 125 -0.9 -0.8 -0.7 -0.6 -1 Tamb ( C) VBE , V Collector current vs. collector emitter voltage Collector current vs. collector emitter voltage -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -100 -80 -10 -45 -40 -8 -0.8 -35 -30 -0.6 -0.4 -40 -6 Ic - mA Ic - mA -60 -25 -20 -4 -15 I B =-0.2mA -10 -20 -2 0 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 IB=-5 A -10 -20 VCE, V -30 -40 -50 VCE, V hFE - I C hFE - I C 1000 1000 VCE=-6V Ta=75 C 50 C -1V 100 hFE hFE VCE=-6V 10 100 25 C -25 C 0 C 10 -0.1 -10 -1 -100 -0.1 I C, mA -10 -1 -100 I C, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/07/2002 ST 2SA733 VCE(sat), VBE(sat) - I C fT - I E VBE(sat) 500 VCE= -6V fT - MHz -1V -0.1 VCE(sat) IC/IB=10 -0.01 -1 100 IC/IB=10 10 1 -100 -10 I E, mA Normalized h-parameters vs. emitter current Normalized h-parameters vs. collector emitter voltage 100 100 VCE=-6V, IE=1mA, f=1kHz -4 hie=5.5k , hre=7.5x10 Normalized h parameters Normalized h parameters 100 10 I C, mA hfe=20s, hoe=28 s 10 hoe hre hfe hie 1 0.1 -0.1 hfe hre hoe hie -1 -10 -100 VCE=-6V, IE=1mA, f=1kHz -4 hie=5.5k , hre=7.5x10 hfe=20s, hoe=28 s hoe 10 hie hre 1 hfe hfe hoe 0.1 0.1 hre hie 1 10 100 IE, mA VCE, V Cob - VCB 100 f=1MHz Cob - pF VCE(sat), VBE(sat) - V -1 10 1 -1 -10 -100 VCB, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/07/2002