MMBTSC5343 NPN Silicon Epitaxial Planar Transistor for general small signal amplifier. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 +150 O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC5343 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=1mA Current Gain Group O Y hFE 70 - 140 - hFE 120 - 240 - G hFE 200 - 400 - L hFE 300 - 700 - VCE(sat) - - 400 mV ICBO - - 0.5 µA IEBO - - 0.5 µA fT - 180 - MHz COB - 2 V(BR)CBO 50 V(BR)CEO 50 - - V V(BR)EBO 5 - - V NF - 1 10 dB Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Transition Frequency at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz pF Collector Base Breakdown Voltage at IC=50µA V Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50µA Noise Figure at VCE=6V, IC=0.1mA,t f=1KHz, RG=10KΩ SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 MMBTSC5343 Pc-Ta I C-VBE 150 100 100 30 10 5 1.0 50 Ta=25 o C Ta=-5 o 5 C 200 VCE=6V Ta=1 o 00 C 250 Collector current Ic (mA) Power disspation Pc(mW) 300 0.5 0 0 25 50 100 75 0.1 150 125 0 0.2 0.4 Ambient temperature Ta ( oC) 0.6 1.2 1.4 3000 33 30 27 8 23 6 20 17 4 13 DC current gain h FE Ta=25 C o Ta=25 C 1000 500 VCE=6V 200 100 VCE=1V 50 10 2 7 I B =3 A 0 0 4 8 16 12 10 20 0.2 0.5 1 2 5 10 20 50 100 Collector current I C (mA) Collector-Emitter voltage VCE (V) VCE(sat)-I C 3 Collector-Emitter saturation voltage VCE(sat) (V) 1.6 h FE -I C o Collector current I C (mA) 1.0 Base-Emitter voltage V BE (V) I C-VCE 10 0.8 o Ta=25 C 1 0.5 0.3 0.1 0.05 I C/I B =50 I C/I B =20 0.03 I C/I B =10 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Collector current I C (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 200