SEMTECH_ELEC ST2SC4002

ST 2SC4002
NPN Silicon Triple Diffused Planar Transistor
for High-Voltage Driver Applications.
The transistor is subdivided into two groups, D and E,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.18g
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
400
V
Collector Emitter Voltage
VCEO
400
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
200
mA
Collector Current (Pulse)
ICP
400
mA
Power Dissipation
Ptot
600
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC4002
Characteristics at Tamb=25 oC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
-
at VCE=10V, IC=50mA
Current Gain Group D
E
hFE
60
-
120
-
hFE
100
-
200
-
ICBO
-
-
0.1
μA
IEBO
-
-
0.1
μA
VCE(sat)
-
-
0.6
V
VBE(sat)
-
-
1.0
V
fT
-
70
-
MHz
Collector Cutoff Current
at VCB=300V
Emitter Cutoff Current
at VEB=4V
Collector Emitter Saturation Voltage
at IC=50mA, IB=5mA
Base Emitter Saturation Voltage
at IC=50mA, IB=5mA
Gain Bandwidth Product
at VCE=30V, IC=10mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002