ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.18g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Current (Pulse) ICP 400 mA Power Dissipation Ptot 600 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC4002 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit DC Current Gain - at VCE=10V, IC=50mA Current Gain Group D E hFE 60 - 120 - hFE 100 - 200 - ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - - 0.6 V VBE(sat) - - 1.0 V fT - 70 - MHz Collector Cutoff Current at VCB=300V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=30V, IC=10mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002