ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 300 mA Base Current IB 60 mA Ptot 600 mW Tj 150 O -55 to +150 O Power Dissipation Junction Temperature Storage Temperature Range TS C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/07/2005 ST 2SC2002 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group M hFE 90 - 180 - L hFE 135 - 270 - K hFE 200 - 400 - hFE 30 80 - - VBE 600 645 700 mV IEBO - - 100 nA ICBO - - 100 nA VCE(sat) - 0.15 0.6 V VBE(sat) - 0.86 1.2 V fT 50 140 - MHz COB - 7.0 15 pF DC Current Gain at VCE=1V, IC=50mA at VCE=2V, IC=300mA Base Emitter Voltage at IC=10mA, VCE=6V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCB=60V Collector Saturation Voltage at IC=300mA, IB=30mA Base Saturation Voltage at IC=300mA, IB=30mA Gain Bandwidth Product at VCE=6V, IE=-10mA Collector to Base Capacitance at VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/07/2005