SFT4100 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 15 AMP DESIGNER’S DATA SHEET HIGH SPEED NPN TRANSISTOR Part Number / Ordering Information 1/ 200 VOLTS SFT4100 __ __ │ └ Screening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package 3/ /3 = TO-3 Features: • Fast Switching, tf = 60 nsec typ. • Very Low Leakage and Saturation • BVCEO 165 Volts Min • High Linear Gain • 200ºC Operating Temperature • Gold Eutectic Die Attach • Available in hermetic isolated and “hot case” power packages • Higher Current Devices Available S1 = SMD1 M = TO254 Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 165 Volts Collector – Base Voltage VCBO 250 Volts Emitter – Base Voltage VEBO 7 Volts Continues Collector Current IC 15 Amps Base Current IB 3 Amps Power Dissipation @ TC = 25ºC PD 120 W Top & Tstg -65 to +200 ºC RθJC 1.46 ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening to MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. TO-3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-254 SMD1 DATA SHEET #: TR0105B DOC SFT4100 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 200mA BVCEO 165 200 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO - 250 –– Volts Emitter – Base Breakdown Voltage IE = 50mA BVEBO 7 15 –– Volts Collector – Cutoff Current VCE = 160 V ICEO –– 0.03 1000 uA Collector – Cutoff Current VCE = 250 V, VEB = 1.5 V VCE =250V, VEB =1.5V, TC= 125C ICEX –– 0.01 1.0 1000 5000 uA VEB = 5 V IEBO –– 0.01 1000 uA VCE(Sat) 15 8 –– –– 30 30 0.25 0.35 45 –– 1.2 1.6 VBE(Sat) –– 1.12 2.0 Volts fT 8 20 –– MHz Emitter – Cutoff Current VCE = 4V, IC = 5A VCE = 4V, IC = 8A IC = 5.0A, IB = 500mA IC = 8.0A, IB = 1.0A DC Current Gain * Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Current Gain Bandwidth Product Clamped ES/B Collector Current IC = 8.0A, IB = 1.0A VCE = 15V, IC = 1.0A, f = 10MHz VClamp = 200V, L = 500 uH VCE = 30V, IC = 4.0A, t = 1s VCE = 135V, IC = 0.15A, t= 1s Safe Operating Area hFE ON Time VCC = 150V, IC = 8A, IB1 = IB2 = 1A Storage Time Fall Time 8 –– Volts A SOA1 SOA2 tON –– 100 1000 nsec tS –– 1200 1700 nsec tf –– 60 800 nsec CASE OUTLINES: SMD1 TO-3 TO-254 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0105B DOC