SSDI SFT4100

SFT4100 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
15 AMP
DESIGNER’S DATA SHEET
HIGH SPEED
NPN TRANSISTOR
Part Number / Ordering Information 1/
200 VOLTS
SFT4100 __ __
│ └ Screening 2/ __ = Not Screen
│
TX = TX Level
│
TXV = TXV Level
│
S
= S Level
│
└ Package 3/
/3 = TO-3
Features:
• Fast Switching, tf = 60 nsec typ.
• Very Low Leakage and Saturation
• BVCEO 165 Volts Min
• High Linear Gain
• 200ºC Operating Temperature
• Gold Eutectic Die Attach
• Available in hermetic isolated and “hot case” power
packages
• Higher Current Devices Available
S1 = SMD1
M = TO254
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
VCEO
165
Volts
Collector – Base Voltage
VCBO
250
Volts
Emitter – Base Voltage
VEBO
7
Volts
Continues Collector Current
IC
15
Amps
Base Current
IB
3
Amps
Power Dissipation @ TC = 25ºC
PD
120
W
Top & Tstg
-65 to +200
ºC
RθJC
1.46
ºC/W
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to
Case
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening to MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
TO-3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
TO-254
SMD1
DATA SHEET #: TR0105B
DOC
SFT4100 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
Typ
Max
Units
Collector – Emitter Breakdown Voltage
IC = 200mA
BVCEO
165
200
––
Volts
Collector – Base Breakdown Voltage
IC = 200µA
BVCBO
-
250
––
Volts
Emitter – Base Breakdown Voltage
IE = 50mA
BVEBO
7
15
––
Volts
Collector – Cutoff Current
VCE = 160 V
ICEO
––
0.03
1000
uA
Collector – Cutoff Current
VCE = 250 V, VEB = 1.5 V
VCE =250V, VEB =1.5V, TC= 125C
ICEX
––
0.01
1.0
1000
5000
uA
VEB = 5 V
IEBO
––
0.01
1000
uA
VCE(Sat)
15
8
––
––
30
30
0.25
0.35
45
––
1.2
1.6
VBE(Sat)
––
1.12
2.0
Volts
fT
8
20
––
MHz
Emitter – Cutoff Current
VCE = 4V, IC = 5A
VCE = 4V, IC = 8A
IC = 5.0A, IB = 500mA
IC = 8.0A, IB = 1.0A
DC Current Gain *
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Current Gain Bandwidth Product
Clamped ES/B Collector Current
IC = 8.0A, IB = 1.0A
VCE = 15V, IC = 1.0A, f = 10MHz
VClamp = 200V, L = 500 uH
VCE = 30V, IC = 4.0A, t = 1s
VCE = 135V, IC = 0.15A, t= 1s
Safe Operating Area
hFE
ON Time
VCC = 150V,
IC = 8A,
IB1 = IB2 = 1A
Storage Time
Fall Time
8
––
Volts
A
SOA1
SOA2
tON
––
100
1000
nsec
tS
––
1200
1700
nsec
tf
––
60
800
nsec
CASE OUTLINES:
SMD1
TO-3
TO-254
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0105B
DOC