SFT5333A Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 AMP, 100 Volts HIGH SPEED PNP TRANSISTOR DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5333A __ __ │ └ Screening │ │ │ │ └ Package 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level __ = TO-5 Features: • • • • • • • Radiation Tolerant Fast Switching, 150ns max t(on) High Frequency, fT 85MHz min. BVCEO 70 Volts min. Low Saturation Voltage 200ºC Operating Temperature, Gold Eutectic Die Attach Designed for Complementary Use with SFT4300A • TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings3/ Symbol Value Units Collector – Emitter Voltage VCEO 70 Volts Collector – Base Voltage VCBO 100 Volts Emitter – Base Voltage VEBO 6 Volts Collector Current IC 2 Amps Base Current IB 1 Amps Total Device Dissipation @ TC = 100ºC Derate above 100ºC PD 15 150 W mW/ºC Top & Tstg -65 to +200 ºC RθJC 7 ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-5 DATA SHEET #: TR0054C DOC SFT5333A Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Max Units IC = 30mA BVCEO 70 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 100 –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 6 –– Volts Collector – Emitter Breakdown Voltage* Collector – Cutoff Current VCB = 90V, TC= 25ºC VCB = 90V, TC= 100ºC ICBO –– 1 75 µA Collector – Cutoff Current VCE = 40V ICEO –– 5 µA VEB = 6V IEBO –– 1 µA 40 40 –– –– 250 –– 0.45 1.0 VBE(On) –– 1.5 Volts Emitter – Cutoff Current DC Current Gain * (VCE = 5V) Collector – Emitter Saturation Voltage * IC = 1A IC = 2A IC = 1A, IB = 100mA IC = 2A, IB = 200mA Base – Emitter Voltage * IC = 2A, VCE = 4VDC HFE VCE(Sat) –– Volts Current Gain Bandwidth Product VCE = 10V, IC = 1ADC, f = 10MHz fT 85 –– MHz Output Capacitance VCB = 30V, IE = 0A, f = 1MHz Cob –– 75 pF VBE = 6V, IC = 0A, f = 1MHz Cib –– 300 pF VCC = 20V, IC = 1ADC, VEB(Off) = 3.7V, IB1 = IB2 = 100mADC, RL= 20Ω tON –– 150 nsec tOFF –– 450 nsec Input Capacitance Turn On Time Turn Off Time TO-5 PIN ASSIGNMENT Package TO-5 Pin 1 Emitter NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Pin 2 Base Pin 3 (Case) Collector DATA SHEET #: TR0054C DOC