SFT501/J and SFT503/J SFT501/JC and SFT503/JC Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 5 AMP 200 Volts HIGH SPEED PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT501 __ __ __ SFT503 __ __ __ │ │ └ Scre ening 2/ __ = Not Screen │ │ TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ │ │ │ │ │ └ Polarity: __ = Normal │ R = Reverse └ Package 3/ J = TO-257, glass seals JC = TO-257, ceramic seals Features: • • • • • • • • Fast Switching High Frequency, 80 MHz Typical BVCEO 150 Volts Min High Linear Gain Low Saturation Voltage and Leakage 200ºC Operating Temperature Gold Eutectic Die Attach Designed for Complementary Use with SFT502/G and SFT504/G Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 150 Volts Collector – Base Voltage VCBO 200 Volts Emitter – Base Voltage VEBO 7 Volts Continues Collector Current IC 5 Amps Base Current IB 1 Amps Power Dissipation @ TC = 50ºC Derate above 50ºC PD 10 66.6 W mW/ºC Top & Tstg -65 to +200 ºC RθJC 15 ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. TO-257 PIN ASSIGNMENT Available Part Numbe rs: Code R SFT501/J SFT501/JC SFT503/J SFT503/JC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH Function Normal Reverse Pin 1 Collector Collector DATA SHEET #: TR0100A Pin 2 Emitter Base Pin 3 Base Emitter DOC SFT501/J and SFT503/J SFT501/JC and SFT503/JC Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 50mA BVCEO 150 200 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 200 275 –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 7 13 –– Volts Collector – Cutoff Current VCE = 100 V ICEO –– –– 1.0 µA Collector – Cutoff Current VCB = 100 V ICBO –– –– 500 nA VEB = 6 V IEBO –– –– 500 nA 20 30 20 50 50 40 –– –– –– –– 70 –– –– 70 0.35 0.6 –– –– –– –– –– –– 0.75 1.5 VB E(Sat) –– –– 1.0 1.2 1.3 1.5 Volts VCE = 5V, IC = 0.5A, f = 10MHz fT 40 60 –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz cob –– 130 225 pF Input Capacitance VBE = 10V, IC = 0A, f = 1MHz Cib –– 450 600 pF td –– 25 50 nsec tr –– 40 250 nsec tS –– 320 600 nsec tf –– 130 300 nsec Emitter – Cutoff Current DC Current Gain * SFT501 VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA SFT503 Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Current Gain Bandwidth Product IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA Delay Time Rise Time Storage Time VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A Fall Time NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH hFE VCE(Sat) DATA SHEET #: TR0100A –– Volts DOC