TGS 2SD1691

TIGER ELECTRONIC CO.,LTD
Product specification
2SD1691 / 2SB1151
Complementary Silicon Power Ttransistors
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
O
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
l
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7.0
V
IC
5.0
A
IC(peak)
8.0
A
Ptot
20
Collector Current
Collector Peak Current
Total Dissipation at
Storage Temperature
150
-55~150
o
Tj
Max. Operating Junction Temperature
Tstg
W
o
C
TO-126
C
O
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cutoff Current
ICBO
VCB=50V, IE=0
—
—
10
uA
Emitter Cut-off Current
IEBO
VEB=7.0V, IC=0
—
—
10
uA
Collector-Emitter Sustaining Voltage
VCEO
IC=10mA, IB=0
60
—
—
V
hFE(1)
VCE=1.0V, IC=0.1A
60
—
—
hFE(2)
VCE=1.0V, IC=2.0A
100
—
400
hFE(3)
VCE=1.0V, IC=5.0A
50
—
—
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat) IC=2.0A,IB=0.2A
—
—
0.3
V
Base - Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=0.2A
—
—
1.2
V
—
—
2.5
us
Storage Time
tstg
IC=2.0A, IB1=-IB2=0.2A
hfe(2): M 100~200, L 160~320, K 200~400
EAST SEMICONDUCTOR CO., LTD
Phone: 86-510-83880883
Fax: 86-510-83883883