TIGER ELECTRONIC CO.,LTD Product specification 2SD1691 / 2SB1151 Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7.0 V IC 5.0 A IC(peak) 8.0 A Ptot 20 Collector Current Collector Peak Current Total Dissipation at Storage Temperature 150 -55~150 o Tj Max. Operating Junction Temperature Tstg W o C TO-126 C O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cutoff Current ICBO VCB=50V, IE=0 — — 10 uA Emitter Cut-off Current IEBO VEB=7.0V, IC=0 — — 10 uA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 60 — — V hFE(1) VCE=1.0V, IC=0.1A 60 — — hFE(2) VCE=1.0V, IC=2.0A 100 — 400 hFE(3) VCE=1.0V, IC=5.0A 50 — — DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=0.2A — — 0.3 V Base - Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=0.2A — — 1.2 V — — 2.5 us Storage Time tstg IC=2.0A, IB1=-IB2=0.2A hfe(2): M 100~200, L 160~320, K 200~400 EAST SEMICONDUCTOR CO., LTD Phone: 86-510-83880883 Fax: 86-510-83883883