TIGER ELECTRONIC CO.,LTD Product specification MJE13007 Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. O Absolute Maximum Ratings ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 8.0 A Base Current IB 4 A Ptot 80 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-220 C Electrical Characteristics ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCE=700V, IE=0 — — 1.0 mA Emitter Cut-off Current IEBO VEB=9V, IC=0 — — 1.0 mA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 400 — — V hFE(1) VCE=5V, IC=2.0A 8 — 40 hFE(2) VCE=5V, IC=5.0A 6 — 30 IC=8.0A,IB=2.0A — — 3.0 IC=5.0A,IB=1.0A — — 1.5 VBE(sat) IC=5.0A,IB=1.0A — — 1.6 V VCE=10V, IC=0.5A,f=1MHz 4 — — MHz Cob VCB=10V,IE=0,f=0.1MHz — 110 — pF tS IB1=-IB2=1.6A,TP=25μs — 1.7 4.0 us DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn Off Time VCE(sat) fT PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn V