isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage:VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage:VCE(sat)= 1.5V (Max) @ IC= 3A APPLICATIONS ·Designed for audio frequency amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current 8 A ICM Collector Current-peak 12 A IB Base Current 0.8 A Collector Power Dissipation @TC=25℃ 40 Collector Power Dissipation @Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ B PC Tj Tstg Storage Temperature Range isc Website：www.iscsemi.cn W 2SD1309 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1309 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 3A; VCE= 2V 2000 hFE-2 DC Current Gain IC= 5A ; VCE= 2V 500 ton Turn-on Time tstg Storage Time hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 isc Website：www.iscsemi.cn MIN TYP. MAX 100 UNIT V B B IC= 3A ,RL= 16.7Ω, IB1= -IB2= 3mA,VCC≈ 50V Fall Time tf CONDITIONS 15000 1.0 μs 3.5 μs 1.2 μs