TIGER ELECTRONIC CO.,LTD Product specification BD139 / BD140 Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Base Current IB 0.5 A Ptot 12.5 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-126 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=80V, IE=0 — — 10 uA Emitter Cut-off Current IEBO VEB=5V, IC=0 — — 10 uA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 80 — — V hFE(1) VCE=2V, IC=0.5A 25 — — hFE(2) VCE=2V, IC=150mA 40 — 250 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=0.5A,IB=50mA — — 0.5 V Base-Emitter Saturation Voltage VBE(sat) VCE=2V,IC=0.5A — — 1.0 V 3 — — MHz Current Gain Bandwidth Product fT VCE=10V,IC=500mA