TGS 2SB772

TIGER ELECTRONIC CO.,LTD
2SD882 / 2SB772
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
3.0
A
Base Current
IB
0.3
A
Ptot
10
W
Tj
150
o
Tstg
-55~150
o
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
C
TO-126
C
O
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICEO
VCB=30V, IE=0
0.01
mA
Emitter Cut-off Current
IEBO
VEB=3V, IC=0
0.01
mA
Collector-Emitter Sustaining Voltage
VCEO
IC=10mA, IB=0
30
hFE(1)
VCE=2V, IC=20mA
30
150
hFE(2)
VCE=2V, IC=1.0A
60
160
400
DC Current Gain
V
Collector-Emitter Saturation Voltage
VCE(sat) IC=2A,IB=200mA
0.3
0.5
V
Base-Emitter Saturation Voltage
VBE(sat) IC=2A,IB=200mA
1.0
2.0
V
Current Gain Bandwidth Product
fT
VCE=5V,IC=100mA
90
MHz