ISC IRF630A

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION
·Drain Current –[email protected] TC=25℃
·Drain Source Voltage: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·This device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications,
such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
Drain [email protected] TC=25℃
9
A
Total [email protected]=25℃
72
W
Max. Operating Junction Temperature
150
℃
-55~150
℃
ID
Ptot
Tj
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.74
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
IRF630A
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON)
Drain-Source On-stage Resistance
IGSS
MIN
MAX
200
V
4
V
VGS= 10V; ID= 4.5A
0.4
Ω
Gate Source Leakage Current
VGS= ±30V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
10
uA
VSD
Diode Forward Voltage
IF=9A; VGS= 0
1.5
V
isc Website:www.iscsemi.cn
2
UNIT