TIGER ELECTRONIC CO.,LTD Product specification TIP35C / TIP36C Complementary Silicon High Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 25 A Base Current IB 5 A Ptot 125 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-3PN ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=60V, IE=0 1.0 mA Emitter Cut-off Current IEBO VEB=5V, IC=0 1.0 mA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 100 hFE(1) VCE=4V, IC=1.5A 25 hFE(2) VCE=4V, IC=15A 10 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=25A,IB=5A Base-Emitter Voltage VBE VCE=4V,IC=15A Transition Frequency fT VCE=5V,IC=1A 3 V 60 4.0 V 2.0 V MHz