TIGER ELECTRONIC CO.,LTD Product specification 2SC3834 Silicon NPN Triple Diffused Planar Transistor DESCRIPTION It is intented for use in power amplifier and switching applications. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8.0 V Collector Current IC 7.0 A Base Current IB 3.0 A Ptot 50 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=200V, IE=0 0.1 mA Emitter Cut-off Current IEBO VEB=8V, IC=0 0.1 mA Collector-Emitter Sustaining Voltage VCEO IC=50mA, IB=0 120 hFE(1) VCE=4V, IC=0.3A 100 hFE(2) VCE=4V, IC=3.0A 70 DC Current Gain V 220 Collector-Emitter Saturation Voltage VCE(sat) IC=3.0A,IB=300mA 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=3.0A,IB=300mA 1.2 V Current Gain Bandwidth Product fT VCE=12V,IC=500mA 10 MHz