JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SA935 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.7 A PC Collector Power Dissipation 750 mW Thermal Resistance From Junction To Ambient 167 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -50µA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 Emitter cut-off current IEBO VEB=-4V,IC=0 DC current gain hFE VCE=-3V, IC=-100mA VCE(sat) IC=-500mA,IB=-50mA Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency 82 -0.5 μA -0.5 μA 390 -0.4 V 20 pF VCB=-10V,IE=0, f=1MHz VCE=-10V,IC=-50mA 100 MHz CLASSIFICATION OF hFE RANK P Q R RANGE 82-180 120-270 180-390 A,Dec,2010