T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across the entire band when operated in the TriQuint wide-band test fixture. The T1P2701012-SP can also be used in narrow band applications and is rated at 15Watts P1dB at 3GHz. Figure 1. Available Packages Table 1. Maximum Ratings Sym V+ Vl+ Parameter Positive Supply Voltage Negative Supply Voltage Range Notes 12.5 V 2/ –5V to 0V Positive Supply Current 5.6A | lG | Gate Supply Current PD TCH Value 2/ 70 mA Power Dissipation See note 3 Operating Channel Temperature o 150 C 2/ 3/ 4/ 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W) 4/ Junction operating temperature will directly affect the device median time to failure(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Table 2. Thermal Information Parameter Test Conditions θJC Thermal Resis- Vd = 10 V tance (channel to Idq = 900 mA backside of carrier) Pdiss = 9 W TCH (°C) θJC (°C/W) TM (HRS) 145 8.3 1.6E+6 Features — Exceptional Instantaneous band-width performance from 500MHz – 3GHz — Increased efficiency results in significant advantages — Smaller and lighter systems — Reduced system component costs — Reduced energy consumption — Typical Performance ratings — Wide-Band 500MHz-3GHz (as tested in TriQuint Wideband Fixture) — 10dB gain — 50% Efficiency — 10Watt P1dB — Narrow Band up to 3GHz — 12dB gain — 60% efficiency — 15Watt P1dB Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TA = 25 °C. Table 3. dc Characteristics Parameter Symbol Min Typ Max Unit Saturated Drain Current Idss — 3000 — mA Transconductance Gm — 4000 — mS Pinch-off Voltage VP -1.35 -1 -0.65 V VBGS VBGD -30 — -8 V -30 — -15 V Symbol Min Typ Max Unit Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Table 4. RF Characteristics Parameter Functional Tests, Instantaneous Band-Width (Tested in TriQuint’s Wide-Band Test Fixture) Gain @ P1dB, 500MHz-3GHz (VDS = 12 V, POUT = 10 W, IDD = 200 mA) G — 10 — dB P1dB, 500MHz-3GHz (VDS = 12 V, POUT = 10 W, IDD = 200 mA) P1dB — 10 — W Power Added Efficiency, 500MHz-3GHz (VDS = 12 V, POUT = 10 W, IDD = 200 mA) — — 45 — % Functional Tests, Narrow Band RF Performance (1GHz) Gain (VDS = 12 V, POUT = 15 W, IDQ = 200 mA) G — 17 — dB P1dB — 15 — W Drain Efficiency (VDS = 12 V, POUT = P1dB, IDQ = 200 mA) — — 59 — % Ruggedness (VDS = 12 V, POUT = 15 W, IDQ = 200 mA, f = 500 MHz, VSWR = 3:1, all angles) — Output Power (VDS = 12 V, 1 dB compression, IDQ = 200 mA) No degradation in output power. Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Typical Instantaneous Wideband Peformance Data, 500MHz-2.7GHz (tested in TriQuint Wideband Fixture) Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Package Dimensions Note: All dimensions in inches. Scale 8:1 .320 .087 .090 .350 45° X .085 .063 .006 .090 2 .351 4 .040 1 .360 Preliminary Data Sheet Subject to Change www.triquint.com/powerband