T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across the entire band when operated in the TriQuint wide-band test fixture. The T1L2003028-SP can also be used in narrow band applications and is rated at 45Watts P1dB at 2GHz. Figure 1. Available Packages Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit R_ JC 1.3 °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Unit Drain-source Voltage VDSS 65 Vdc Gate-source Voltage VGS –0.5, +15 Vdc ID 4.25 Adc PD 135 W T1L2003028-SP — 0.77 W/°C Operating Junction Temperature TJ 200 °C TSTG –65, +150 °C Drain Current—Continuous Total Dissipation at TC = 25 °C: T1L2003028-SP Derate Above 25 °C: Storage Temperature Range * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* T1L2003028-SP Minimum (V) Class HBM 500 1B MM 50 A CDM 1500 4 Features — Exceptional Instantaneous band-width performance from 500MHz – 2GHz — Increased efficiency results in significant advantages — Smaller and lighter systems — Reduced system component costs — Reduced energy consumption — Typical Performance ratings — Wide-Band 500MHz-2GHz (as tested in TriQuint Wideband Fixture) — 10dB gain — 45% Efficiency — 30Watt P1dB — Narrow Band up to 2GHz — 14dB gain — 59% efficiency — 45Watt P1dB * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC’s JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc IGSS — — 1.3 μAdc IDSS — — 75 μAdc Forward Transconductance (VDS = 10 V, ID = 1.0 A) GFS — 3 — S Gate Threshold Voltage (VDS = 10 V, ID = 400 μA) VGS(TH) — — 4.8 Vdc Gate Quiescent Voltage (VDS = 28 V, IDQ = 450 mA) VGS(Q) — 3.5 — Vdc VDS(ON) — 0.25 — Vdc Symbol Min Typ Max Unit Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 200 μA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) CISS — 73 — pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS — 23 — pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) CRSS — 1.2 — pF Functional Tests, Instantaneous Band-Width (Tested in TriQuint’s Wide-Band Test Fixture) Gain @ P1dB, 500MHz-2GHz (VDS = 28 V, POUT = 30 W, IDD = 200 mA) G — 10 — dB P1dB, 500MHz-2GHz (VDS = 28 V, POUT = 30 W, IDD = 200 mA) P1dB — 30 — W Power Added Efficiency, 500MHz-2GHz (VDS = 28 V, POUT = 30 W, IDD = 200 mA) — — 45 — % Functional Tests, Narrow Band RF Performance (1GHz) Linear Power Gain (VDS = 28 V, POUT = 6 W, IDQ = 450 mA) GL 19 20 — dB P1dB 45 60 — W — — 59 — % Third-order Intermodulation Distortion (100 kHz spacing, VDS = 28 V, POUT = 45 WPEP, IDQ = 450 mA) IMD — –31 — dBc Input Return Loss IRL — 10 — dB Output Power (VDS = 28 V, 1 dB compression, IDQ = 450 mA) Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 450 mA) Ruggedness (VDS = 28 V, POUT = 45 W, IDQ = 450 mA, f = 880 MHz, VSWR = 10:1, all angles) — No degradation in output power. Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Typical Instantaneous Wide-Band Performance Data, 500MHz-2GHz (tested in TriQuint wide-band fixture) Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Package Dimensions Note: All dimensions in inches. Scale 8:1 .320 .087 .090 .350 45° X .085 .063 .006 .090 2 .351 4 .040 1 .360 Preliminary Data Sheet Subject to Change www.triquint.com/powerband