TRIQUINT TGA9092-SCC

Product Data Sheet
January 10, 2005
6 - 18 GHz High Power Amplifier
TGA9092-SCC
Key Features and Performance
•
•
•
•
•
•
•
•
Dual Channel Power Amplifier
0.25um pHEMT Technology
6-18 GHz Frequency Range
2.8 W/Channel Midband Pout
5.6 W Pout Combined
24 dB Nominal Gain
Balanced In/Out for Low VSWR
8V @ 1.2A per Channel Bias
Primary Applications
•
X-Ku band High Power
•
VSAT
36
Chip Dimensions 5.739 mm x 4.318 mm x 0.1016 mm
35
Product Description
The TriQuint TGA9092-SCC is a dual channel, threestage wide band HPA MMIC designed using TriQuint’s
proven 0.25 µm Power pHEMT process to support a
variety of high performance applications including
military EW programs, VSAT, and other applications
requiring wideband high power performance.
Pout @ P2dB (dBm)
34
33
32
31
30
29
28
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Typical Measured Pout (RF Probe)
Each amplifier channel consists of one 1200 µm input
device driving a 2400 µm intermediate stage which
drives a 4800 um output stage.
27
26
25
24
23
Gain (dB)
The TGA9092-SCC provides a nominal 34 dBm of
output power at 2dB gain compression across the 6-18
GHz range per channel . Power combined, nominal
output power of 36.5 dBm can be expected with low
loss external couplers. Typical per channel small
signal gain is 24 dB. Typical single-ended Input/Output
RL is 6-8 dB across the band.
22
21
20
19
18
17
16
The TGA9092-SCC is 100% DC and RF tested onwafer to ensure performance compliance. The device
is available in chip form.
15
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Typical Measured Small Signal Gain
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
1
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 5/
+
Positive Supply Voltage
-
Negative Supply Voltage Range
V
V
+
I
Positive Supply Current (Quiescent)
Value
Notes
9V
4/
-5V TO 0V
3.5 A
4/
| IG |
Gate Supply Current
PIN
Input Continuous Wave Power
26 dBm
4/
PD
Power Dissipation
28.8 W
3/ 4/
TCH
Operating Channel Temperature
150 0C
1/ 2/
TM
TSTG
Mounting Temperature
(30 Seconds)
Storage Temperature
84.48 mA
0
320 C
-65 to 150 0C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T M).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/
When operated at this bias condition with a base plate temperature of 70 0C, the median
life is reduced from 1.6 E+6 to 5.4 E+4 hours.
4/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
5/
These ratings represent the maximum operable values for this two-channel device.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
2
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE II
DC PROBE TEST
(TA = 25 °C ± 5 °C)
Symbol
Parameter
Minimum
Maximum
Unit
Imax(Q1)
Maximum Current
400
800
mA
Gm (Q1)
Transconductance
200
600
mS
VP
Pinch-off Voltage
-1.5
-0.5
V
Breakdown Voltage GateSource
Breakdown Voltage GateDrain
-30
-13
V
-30
-13
V
BVGS
BVGD
TABLE III
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
FET Parameters
G m : Transconductance;
(I
DSS
)
− IDS 1
VG1
Test Conditions
For all material types, V DS is swept between 0.5 V
and VDSP in search of the maximum value of Ids.
This maximum IDS is recorded as IDS1. For
Intermediate and Power material, IDS1 is measured
at V GS = VG1 = -0.5 V. For Low Noise, HFET and
pHEMT material, V GS = VG1 = -0.25 V. For
LNBECOLC, use V GS = VG1 = -0.10 V.
V P : Pinch-Off Voltage; V GS for I DS = 0.5 mA/mm of
gate width.
V DS fixed at 2.0 V, V GS is swept to bring IDS to
0.5 mA/mm.
V BVGD : Breakdown Voltage, Gate-to-Drain; gate-todrain breakdown current (I BD ) = 1.0 mA/mm
of gate width.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V GD ) measured is V BDGD and recorded as
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
V BVGS : Breakdown Voltage, Gate-to-Source; gate-tosource breakdown current (I BS) = 1.0 mA/mm
of gate width.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-tosource voltage (V GS) measured is V BDGS and recorded
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
I MAX : Maximum I DS.
Positive voltage is applied to the gate to saturate the
device. V DS is stepped between 0.5 V up to a
maximum of 3.5 V, searching for the maximum
value of I DS.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
3
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE IV
RF WAFER CHARACTERIZATION TEST*
(TA = 25°C + 5°C)
(Vd = 8V, Id = 1.2A ±5%)
Parameter
Test Condition
Limit
Units
dB
Small-signal
Power Gain
F = 6 to 17 GHz
F = 18 GHz
Min Nom Max
20
24
18
Input Return
Loss
Output Return
Loss
F = 6 to 18 GHz
6
dB
F = 6 to 18 GHz
8
dB
Output Power
@ 2dB gain
compression
Power Added
Efficiency
F = 6 to 8 GHz
F = 9 to 18 GHz
32
32.5
34.5
-
dBm
F = 6 to 18 GHz
12
25
-
%
Note: RF probe data taken at 1 GHz steps
* This information is based on the per-channel device.
TABLE V
THERMAL INFORMATION*
Parameter
RθJC Thermal Resistance
(channel to backside of
carrier)
Test Conditions
Vd = 8 V
ID = 2.4 A
Pdiss = 19.2 W
TCH
(oC)
144.56
RθJC
(°C/W)
TM
(HRS)
3.88
1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
*
This information is a result of a thermal model analysis based on the entire two-channel
device.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
4
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF
Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
36
35
Pout @ P2dB (dBm)
34
33
32
31
30
29
28
6
7
8
9
10
11
12
13
14
15
16
14
15
16
17
18
Frequency (GHz)
40
35
30
PAE (%)
25
20
15
10
5
0
6
7
8
9
10
11
12
13
17
18
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
5
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF
Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
0
-2
Input Return Loss (dB)
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
0
-2
Output Return Loss (dB)
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
6
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF
Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
27
26
25
24
Gain (dB)
23
22
21
20
19
18
17
16
15
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
7
Product Data Sheet
January 10, 2005
Mechanical Drawing
TriQuint Semiconductor Texas: Phone (972)994 8465
TGA9092-SCC
Fax (972)994 8504 Web: www.triquint.com/mmw
8
Product Data Sheet
January 10, 2005
Chip Assembly and Bonding Diagram
TGA9092-SCC
Note: All Vd's may be connected external to the MMIC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
9
Product Data Sheet
January 10, 2005
TGA9092-SCC
Assembly Process Notes
Reflow process assembly notes:
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Use AuSn (80/20) solder with limited exposure to temperatures at or above 300ŒC.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
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•
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Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
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•
•
•
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Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200ŒC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
10