2SC4116 General Purpose Transistor NPN Silicon COLLECTOR 3 3 P b Lead(Pb)-Free 1 1 BASE 2 2 EMITTER FEATURES * High voltage and high current * Excellent h FE linearity * High h FE * Low noise * Complementary to 2SA1586 SOT-323(SC-70) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 100 mW Junction Temperature TJ 150 ℃ Tstg -55 to +150 ℃ Parameter Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 - - V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 - - V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 - - V Collector cut-off current ICBO VCB=60V,IE=0 - - 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 - - 0.1 μA DC current gain hFE VCE=6V,IC=2mA 70 - 700 - - 0.25 V 80 - - MHz - - 3.5 pF - - 10 dB Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance Cob Noise figure NF IC=100mA,IB=10mA VCE=10V,IC=1mA, VCB=10V,IE=0,f=1MHz VCE=6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ CLASSIFICATION OF hFE O Y GR BL Range 70-140 120-240 200-400 350-700 Marking LO LY LG LL Rank W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 25-Jun-08 WEITRON 2SC4116 W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/3 25-Jun-08 WEITRON 2SC4116 WEIT R ON h tt p :// w w w . w eit r o n . c o m . tw 3/3 25-Jun-08