MGSF1P02 Power MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 0.35Ω *Low Input Capacitance: 130 PF *Low Out put Capacitance : 120 PF *Low Threshole : 1.7V(TYE) *Fast Switching Speed : 2.5ns GATE 1 2 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGS ±20 V ID 750 mA _ Pulsed Drain Current(1) (t p<10us) IDM 2000 mA Power Dissipation (TA=25 C) PD 400 mW R θJA 300 C/W TJ, Tstg -55 to 150 C Continuous Drain Current (TA=25 C) Thermal Resistance Junction-to-Ambient Operating Junction and Storage Temperature Range Device Marking MGSF1P02=PC Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw MGSF1P02 Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=VGS , ID=250 uA Gate-body Leakage Current _ 20V, VDS=0V VGS= + Zero Gate Voltage Drain Current VDS=20V, VGS=0V VDS=20V, VGS=0V, Tj=125 C Static Drain-to-Source On-Resistance VGS=10V, ID=1.5A VGS=4.5V, ID=0.75A V(BR)DSS 20 - - V VGS (th) 1.0 1.7 2.4 V IGSS - - + _100 nA IDSS - - - 1.0 10 uA rDS (on) - 0.235 0.375 0.350 0.500 Ohms Ciss - 130 - Coss - 120 - Crss - 60 - td(on) - 2.5 - tr - 1.0 - td(off ) - 16 - tf - 8.0 - QT - 6000 - pC A Dynamic Characteristics Input Capacitance VDS=5.0V Output Capacitance VDS=5.0V Transfer Capacitance(See FIG.6) VDG=5.0V PF Switching Characteristics(2) Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD =15V, ID =1.0A, R L=5 0Ω, ) Fall Time Gate Charge nS Source-Drain Diode Characteristics Continuous Current IS - - 0.6 Pulsed Current I SM - - 0.75 Forward Voltage (2) VSD - 1.5 - Note: _ 2%. _ 300us, Duty Cycle < 1. Pulse Test: Pulse Width < 2. Switching characteristics are independent of operating junction temperature. WEITRON http://www.weitron.com.tw V MGSF1P02 1.5 1.5 VGS = 3.5 V 1.25 1 1 3.0 V 0.75 0.75 TJ = 150 C -55 C 0.5 25 C 0.25 0 2.75 V 0.5 2.5 V 0.25 2.25 V 1 1.5 2 2.5 3 0 3.5 0 1 VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) 0.45 25 C 0.4 -55 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID , DRAIN CURRENT (AMPS) R DS(on) , DRAIN-TO-SOURCE RESIST ANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESIST ANCE (OHMS) 150 C VGS = 4.5 V 0.35 0 VGS = 10 V ID = 1.5 A 1.1 VGS = 4.5 V ID = .75 A 1.05 1 0.95 0.9 0.85 0.8 - 55 -5 45 95 145 TJ , JUNCTION TEMPERATURE ( C) FIG.5 On-Resistance Variation with Temperature WEITRON http://www.weitron.com.tw 5 6 7 8 9 10 0.4 0.36 VGS = 10 V 0.34 150 C 0.32 0.3 0.28 25 C 0.26 0.24 -55 C 0.22 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID , DRAIN CURRENT (AMPS) FIG.4 On-Resistance versus Drain Current VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) 1.25 1.15 4 0.38 FIG.3 On-Resistance versus Drain Current 1.2 3 FIG.2 On-Region Characteristics 0.55 0.5 2 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIG.1 Transfer Characteristics R DS(on) , DRAIN-TO-SOURCE RESIST ANCE (NORMALIZED) 3.25 V 1.25 ID , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS = 10 V 10 VDS = 16 V TJ = 25 C 8 6 4 ID = 1.5 A 2 0 0 1000 2000 3000 4000 QT , TOTAL GATE CHARGE (pC) FIG.6 Gate Charge 5000 6000 MGSF1P02 1000 TJ = 150 C 0.1 25 C C , CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 1 -55 C 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD , DIODE FORWARD VOLTAGE (VOLTS) FIG.7 Body Diode Forward Voltage WEITRON http://www.weitron.com.tw 1.8 VGS = 0 V f = 1 MHz TJ = 25 C Ciss 100 Coss Crss 10 0 2 4 6 8 VDS , DRAIN-TO-SOURCE VOLTAGE (Volts) FIG.8 Capacitance 10 MGSF1P02 SOT-23 Package Outline Dimensions Unit:mm A B T OP V IE W E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M