WTN9435 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free DRAIN CURRENT -6.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -30 VOLTAGE 1 GATE Features: 3 SOURCE * Super high dense cell design for low RDS(ON) RDS(ON) < 50mΩ @ VGS = -10V * Simple Drive Requirement * Lower On-Resistance * Fast Switching Maximum Ratings(TA=25℃ 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 4 1 2 3 SOT-223 Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID -6.0 -4.8 A Pulsed Drain Current1 IDM -20 A Total Power Dissipation(TA=25°C) PD 2.7 W RθJA 45 °C/W TJ,Tstg -55 ~ +150 °C Continuous Drain Current3 ,VGS@10V(TA=25°C) ,VGS@10V(TA=70°C) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range Device Marking WTN9435 = 9435 WEITRON http:www.weitron.com.tw 1/6 07-Oct-05 WTN9435 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS -30 - - V VGS(Th) -1.0 - -3.0 V Static Drain-Source Breakdown Voltage VGS = 0, ID = -250µA Gate-Source Threshold Voltage VDS = VGS, ID = -250µA Gate-Source Leakage Current VGS = ± 25V IGSS - - ±100 nA Drain-Source Leakage Current(Tj=25°C) VDS = -30A, VGS = 0 Drain-Source Leakage Current(Tj=70°C) VDS = -24V, VGS = 0 IDSS - - -1 μA - - -25 Drain-Source On-Resistance2 VGS = -10A, ID = -5.3A VDS = -4.5A, ID = -4.2A RDS(ON) - - 50 100 mΩ Forward Transconductance VDS = -10A, ID = -5.3A gfs - 10 - S Input Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz Ciss - 507 912 Output Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz Coss - 222 - Reverse Transfer Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz Crss - 158 - Dynamic WEITRON http:www.weitron.com.tw 2/6 pF 07-Oct-05 WTN9435 Switching Turn-on Delay Time2 VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω td(on) - 11 - Rise Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω tr - 8 - Turn-off Delay Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω td(off) - 25 - Fall Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω tf - 17 - Total Gate Charge2 VDS=-24V,VGS=-4.5V,ID=-5.3A Qg - 9.2 16 Gate-Source Charge VDS=-24V,VGS=-4.5V,ID=-5.3A Qgs - 2.8 - Gate-Drain Change VDS=-24V,VGS=-4.5V,ID=-5.3A Qgd - 5.2 - Forward On Voltage2 VGS=0V, IS=-2.3A VSD - - -1.2 V Reverse Recovery Time VGS=0V, IS=-5.3A, dl/dt=100A/μs Trr - 29 - ns Reverse Recovery Charge VGS=0V, IS=-5.3A, dl/dt=100A/μs Qrr - 20 - nC ns nC Source-Drain Diode Characteristics Note: 1. Pulse width limited by max, junction temperature. 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 120°C/W when mounted on Min, copper pad. WEITRON http:www.weitron.com.tw 3/6 07-Oct-05 WTN9435 30 -10V -8.0V -6.0V -5.0V 25 20 VG = -4.0V TA=25° C 15 10 0 0 1 2 3 4 ,DRAIN-TO-SOURCE VOLTAGE(V) -V DS -5.0V VG =-4.0V 15 10 0 5 0 2 3 4 5 6 -VDS ,Drain-to-source Voltage(V) 7 1.8 I D = -5.3A 100 I D = -5.3A 1.6 T A = -25°C Normalized RDs(on) 90 80 70 60 50 VG = -10V 1.4 1.2 1.0 0.8 40 30 1 Fig.2 Typical Output Characteristics 110 R Ds(on) (mΩ) -6.0V 20 FIG.1 Typical Output Characteristics 3 4 5 6 7 8 9 10 -VGS ,Gate-to-source Voltage(V) 0.0 -50 11 4 10 3 -V GS(th) (V ) Tj = 25°C 1 0.1 50 100 150 Fig.4 Normalized OnResistance 100 Tj = 150°C 0 Tj ,Junction Temperature(°C) Fig.3 On-Resistance v.s. Gate Voltage -I S (A ) -8.0V 5 5 0.01 -10V TA =150 ° C 25 -I D ,Drain Current (A) -I D ,DRAIN CURRENT (A) 30 2 1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 VDS ,Source-to-Drain Voltage(V) Fig.5 Forward Characteristics of Reverse Diode WEITRON http://www.weitron.com.tw 1.5 0 -50 0 50 100 150 Tj ,Junction Temperature(°C) Fig.6 Gate Threshold Voltage v.s. Junction Temperature 4/6 07-Oct-05 WTN9435 V DS = -24V 10 1000 8 Ciss C ( pF) -VGS , Gate to Source Voltage(V) I D = -5.3A 12 6 Coss Crss 100 4 2 0 0 2 4 6 8 10 12 14 16 0 18 QG , Total Gate Charge(nC) 1 5 1 1ms 10ms 1 100ms TA = 25°C Single Pulse 0.01 0.1 DC 1 10 13 17 21 25 29 Duty factor = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 Is 0.1 Normalized Thermal Response(R θ ja ) 100 10 9 -VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics Fig 7. Gate Charge Characteristics -I D (A) f = 1.0MHz 10000 14 100 T Single pulse 0.001 0.0001 0.001 0.01 -VDS , Drain-to-Source Voltage(V) Fig 9. Maximum Safe Operation Area Duty factor = t / T Peak Tj=P DMx R θ ju + Ta R θ ja=120°C / W 0.1 1 10 100 1000 t, Pulse Width(s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Fig 11. Switching Time Circuit WEITRON http://www.weitron.com.tw Q Fig.12 Gate Charge Waveform 5/6 07-Oct-05 WTN9435 SOT-223 Outline Dimensions unit:mm A F DIM 4 S 1 2 3 B D L G J C H WEITRON http://www.weitron.com.tw M K 6/6 A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 07-Oct-05