WTC1333 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT 3 DRAIN -550m AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <600mΩ@V GS =-10V *Simple Gate Drive *Small package Outline *Fast Switching Speed *SOT-23 Package SOURCE 3 1 2 SOT-23 Description *Designer with best combination of fast switching *Low on-resistance *Cost-effectiveness Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current3 ,(TA=25˚C) ,(TA=70˚C) ID -550 -440 Pulsed Drain Current1,2 IDM 2.5 Total Power Dissipation(TA=25˚C) PD 1.0 W RθJA 125 ˚C/W TJ,Tstg - 55~+150 ˚C Maximum Thermal Resistace Junction-ambient Operating Junction and Storage Temperature Range Unit V mA Device Marking WTC1333=1333 WEITRON http:www.weitron.com.tw 1/6 17-Jun-05 WTC1333 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max -20 - - Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250μA BVDSS Gate-Source Threshold Voltage VDS=VGS,ID=-250μA VGS(Th) V Gate-Source Leakage current VGS=±12V IGSS Drain-SourceLeakage Current(Tj=25˚C) VDS=-20V,VGS=0 Drain-SourceLeakage Current(Tj=70˚C) VDS=-16V,VGS=0 -0.5 - -1.2 - - ±100 - - -1 nA μA IDSS - - -10 Drain-SourceOn-Resistance VGS=-10V,ID=-550mA VGS=-4.5V,ID=-500mA VGS=-2.5V,ID=-300mA RDS(on) - - 600 800 1000 Forward Transconductance VDS=-5V,ID=-550mA gfs - 1 - Input Capacitance VGS=0V,VDS=-10V,f=1.0MHz Ciss - 66 105.6 Output Capacitance VGS=0V,VDS=-10V,f=1.0MHz Coss - 25 - Reverse Transfer Capacitance VGS=0V,VDS=-10V,f=1.0MHz Crss - 20 - mΩ S Dynamic WEITRON http:www.weitron.com.tw 2/6 pF 17-Jun-05 WTC1333 Switching Turn-on Delay Time2 VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω td(on) - 5 - Rise Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω tr - 8 - Turn-off Delay Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω td(off) - 10 - Fall Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω tf - 2 - Total Gate Charge2 VDS=-16V,VGS=-4.5V,ID=-500mA Qg - 1.7 2.7 Gate-Source Charge VDS=-16V,VGS=-4.5V,ID=-500mA Qgs - 0.3 - Gate-Source Change VDS=-16V,VGS=-4.5V,ID=-500mA Qgd - 0.4 - VSD - - -1. 2 ns nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=-300mA V Note: 1. Pulse width limited by Max, junction temperature. 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. 3. Surface mounted on FR4 board, t ≤ 10sec. WEITRON http:www.weitron.com.tw 3/6 17-Jun-05 WTC1333 2.5 -5.0V TA=25°C 2.0 -3.5V 1.5 -2.5V 1.0 VG=-2.0V 0.5 0.0 0.0 0.5 1.0 1.5 2.0 VG= -2.0V 0.5 0.0 2.5 0.0 0.5 1.0 1.5 2.0 VDS ,Drain-to-source Voltage(V) 2.5 Fig.2 Typical Output Characteristics 1.6 I D = -0.3A TA = 25˚C 1200 I D = -0.5A VG = -4.5V 1.4 Normalized RDs(on) 1000 RDs(on) (mΩ) -2.5V 1.0 1400 800 600 1.2 1.0 0.8 400 1 4 7 -VGS ,Gate-to-source Voltage(V) 0.6 -50 10 0 50 100 150 Tj ,Junction Temperature(˚C) Fig.3 On-Resistance v.s. Gate Voltage Fig.4 Normalized OnResistance 1.0 2.0 Normalized -VGS(th)(V) 0.8 0.6 -IS(A) -3.5V 1.5 FIG.1 Typical Output Characteristics Tj = 150˚C 0.4 Tj = 25˚C 1.5 1.0 0.5 0.2 0.0 TA=150°C 2.0 -VDS ,DRAIN-TO-SOURCE VOLTAGE(V) 200 -5.0V -4.5V -4.5V ID ,Drain Current (A) -I D ,DRAIN CURRENT (A) 2.5 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -VDS ,Source-to-Drain Voltage(V) http://www.weitron.com.tw 0 50 100 Tj ,Junction Temperature(˚C) 150 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Fig.5 Forward Characteristics of Reverse Diode WEITRON -50 4/6 17-Jun-05 WTC1333 100 I D = -0.5A 10 Ciss VDS = -16V 8 6 Coss 4 Crss 2 0 0 1 2 3 10 4 1 3 5 7 9 11 -VDS, Drain-to-Source Voltage(V) QG , Total Gate Charge(nC) Fig 8. Typical Capacitance Characteristics Fig 7. Gate Charge Characteristics 1 Normalized Thermal Response(Rθ ja ) 10 100us -I D(A) 1 1ms 0.1 10ms TA = 25˚C Single Pulse 0.01 f = 1.0MHz C(pF) -VGS , Gate to Source Voltage(V) 12 0.1 100ms DC 1 10 100 -VDS , Drain-to-Source Voltage(V) Fig 9. Maximum Safe Operation Area Duty factor = 0.5 0.2 0.1 0.05 0.1 PDM t 0.02 T Duty factor = t / T Peak Tj=PDM x Rθ ja + Ta 0.01 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 t, Pulse Width(s) 10 100 1000 Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Fig 11. Switching Time Circuit WEITRON http://www.weitron.com.tw Q Fig.12 Gate Charge Waveform 5/6 17-Jun-05 WTC1333 SOT-23 Outline Dimension Unit:mm SOT-23 A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 17-Jun-05