WEITRON WTD40N03

WTD40N03
Surface Mount P-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
DRAIN CURRENT
-15 AMPERES
P b Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1 GATE
Features:
2
*Super High Dense Cell Design For Low R DS(ON)
SOURCE
R DS(ON) <90m Ω@V GS =-10V
4
*Simple Drive Requirement
1
*Lower On-resistance
1. GATE
2.4 DRAIN
3. SOURCE
*Fast Switching Characteristic
*TO-252 Package
2
3
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
ID
-20
-13
IDM
150
Total Power Dissipation(TC=25˚C)
PD
50
W
Thermal Resistance Junction-case
RθJC
2.5
˚C/W
Thermal Resistance Junction-ambient
RθJA
110
˚C/W
TJ,Tstg
- 55~+150
˚C
Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C)
Pulsed Drain Current
1
Operating Junction and Storage Temperature Range
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Unit
V
A
12-Jul-07
WTD40N03
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
-
-
Unit
Static
Drain-Source Breakdown Voltage
ID=250µA,VGS=0
BVDSS
Gate-Source Threshold Voltage
ID=250µA,VDS=VGS
VGS(Th)
1.0
-
3.0
IGSS
-
-
±100
-
-
25
V
Gate-Source Leakage current
VGS=±20V
Drain-SourceLeakage Current(Tj=25˚C)
VDS=30V,VGS=0
Drain-SourceLeakage Current(Tj=150˚C)
VDS=24V,VGS=0
nA
μA
IDSS
-
-
250
RDS(on)
-
18
24
21
30
mΩ
gfs
-
26
-
S
Input Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Ciss
-
800
-
Output Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Coss
-
380
-
Reverse Transfer Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Crss
-
133
-
Static Drain-Source On-Resistance
ID=18A,VGS=10V
ID=14A,VGS=4.5V
Forward Transconductance
ID=18A,VDS=10V
Dynamic
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pF
12-Jul-07
WTD40N03
Switching
Turn-on Delay Time2
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Td(on)
-
7.2
-
Rise Time
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Tr
-
60
-
Turn-off Delay Time
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Td(off)
-
22.5
-
Fall Time
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Tf
-
10
-
Total Gate CHarge2
ID=18A,VDS=24V,VGS=5V
Qg
-
17
-
Gate-Source Charge
ID=18A,VDS=24V,VGS=5V
Qgs
-
3
-
Gate-Drain (”Miller”) Change
ID=18A,VDS=24V,VGS=5V
Qgd
-
10
-
Forward On Voltage2
IS=36A, VGS=0V,Tj=25˚C
VSD
-
-
1.3
V
Continuous Source Current (Body Diode)
VD=VG=0V,VS=1.3V
IS
-
-
36
-
A
Pulsed Source Durrent (Body Diode)1
ISM
-
-
150
A
ns
nC
Source-Drain Diode Characteristics
Note: 1. Pulse width limited by safe operating area.
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
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12-Jul-07
WTD40N03
Characteristics Curve
100
80
VG=10V
VG=7.0V
VG=6.0V
60
VG=5.0V
40
VG=4.0V
20
0
80
ID , Drain Current (A)
ID , Drain Current (A)
Tc=25˚C
VG=5.0V
40
VG=4.0V
20
VG=3.0V
0
1
2
3
4
5
VDS . Drain-to-Source Voltage(V)
6
VG=3.0V
0
7
TC=25˚C
2
3
4
5
VDS . Drain-to-Source Voltage(V)
6
7
Fig.2 Typical Output Characteristics
ID=18A
VG=10V
1.60
1.40
27
25
1.20
23
1.00
21
0.80
19
17
0
1
Normalized R DS(ON)
29
0
1.80
ID=18A
31
R DSON (mΩ)
VG=10V
VG=7.0V
VG=6.0V
60
FIG.1 Typical Output Characteristics
4
5
6
7
8
VGS (V)
9
10
11
12
0.60
-50
Fig.3 On-Resistance v.s. Gate Voltage
0
Tj
50
100
150
Fig.4 Normalized OnResistance
40
60
35
50
30
40
25
PD (W)
ID,Dream Current(A)
Tc=150˚C
20
15
30
20
10
10
5
0
25
50
Tj
75
100
150
0
150
http://www.weitron.com.tw
50
Tj
75
100
150
150
Fig.6 Type Power Dieeipation
Fig.5 Maximum Drain Current
v.s. Case Temperature
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25
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12-Jul-07
WTD40N03
10
Normalized Thermal Response(Rthjc)
100
100
ID(A)
10us
100us
1ms
10
10ms
D=0.01 Ta
1
100ms
1
10
0.2
PDM
0.05
t
SINGLE PULSE
0.02
T
0.01
Duty factor = t / T
Peak Tj=PDM x Rthjc + TC
0.01
0.1
1
f=1.0MHz
10000
Id=20A
14
10
Fig 8. Effective Transient Thermal Impedance
16
VD=16V
VD=20V
12
VD=24V
C(pF)
10
8
1000
Ciss
6
Coss
4
2
Crss
1
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
35
100
40
1
5
9
13
17
VDS (V)
21
25
29
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
3
100
Tj
10
VGS(th) (V)
Tj
IS (A)
0.1
0.1
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
VGS,Gate to Source Voltage (V)
DUTY=0.5
0.01
0.00001 0.0001 0.001
100
VDS(V)
1
1
2
1
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0
1.5
VSD (V)
Fig 11. Forward Charateristics of
Reverse Diode
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-50
Tj
0
50
100
150
Fig.12 Gate Threshold Voltage v.s.
Junction Temperature
5/6
12-Jul-07
WTD40N03
D-PAK / (TO-252) Outline Dimension
Unit:mm
D-PAK
E
A
G
4
H
Dim
A
B
C
D
E
G
H
J
K
L
M
J
1
2
3
B
M
K
D
C
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L
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Min
6.40
9.00
0.50
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
12-Jul-07