WTD40N03 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN DRAIN CURRENT -15 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low R DS(ON) SOURCE R DS(ON) <90m Ω@V GS =-10V 4 *Simple Drive Requirement 1 *Lower On-resistance 1. GATE 2.4 DRAIN 3. SOURCE *Fast Switching Characteristic *TO-252 Package 2 3 D-PAK / (TO-252) Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ID -20 -13 IDM 150 Total Power Dissipation(TC=25˚C) PD 50 W Thermal Resistance Junction-case RθJC 2.5 ˚C/W Thermal Resistance Junction-ambient RθJA 110 ˚C/W TJ,Tstg - 55~+150 ˚C Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Operating Junction and Storage Temperature Range WEITRON http:www.weitron.com.tw 1/6 Unit V A 12-Jul-07 WTD40N03 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max 30 - - Unit Static Drain-Source Breakdown Voltage ID=250µA,VGS=0 BVDSS Gate-Source Threshold Voltage ID=250µA,VDS=VGS VGS(Th) 1.0 - 3.0 IGSS - - ±100 - - 25 V Gate-Source Leakage current VGS=±20V Drain-SourceLeakage Current(Tj=25˚C) VDS=30V,VGS=0 Drain-SourceLeakage Current(Tj=150˚C) VDS=24V,VGS=0 nA μA IDSS - - 250 RDS(on) - 18 24 21 30 mΩ gfs - 26 - S Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss - 800 - Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Coss - 380 - Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Crss - 133 - Static Drain-Source On-Resistance ID=18A,VGS=10V ID=14A,VGS=4.5V Forward Transconductance ID=18A,VDS=10V Dynamic WEITRON http:www.weitron.com.tw 2/6 pF 12-Jul-07 WTD40N03 Switching Turn-on Delay Time2 ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω Td(on) - 7.2 - Rise Time ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω Tr - 60 - Turn-off Delay Time ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω Td(off) - 22.5 - Fall Time ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω Tf - 10 - Total Gate CHarge2 ID=18A,VDS=24V,VGS=5V Qg - 17 - Gate-Source Charge ID=18A,VDS=24V,VGS=5V Qgs - 3 - Gate-Drain (”Miller”) Change ID=18A,VDS=24V,VGS=5V Qgd - 10 - Forward On Voltage2 IS=36A, VGS=0V,Tj=25˚C VSD - - 1.3 V Continuous Source Current (Body Diode) VD=VG=0V,VS=1.3V IS - - 36 - A Pulsed Source Durrent (Body Diode)1 ISM - - 150 A ns nC Source-Drain Diode Characteristics Note: 1. Pulse width limited by safe operating area. 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. WEITRON http:www.weitron.com.tw 3/6 12-Jul-07 WTD40N03 Characteristics Curve 100 80 VG=10V VG=7.0V VG=6.0V 60 VG=5.0V 40 VG=4.0V 20 0 80 ID , Drain Current (A) ID , Drain Current (A) Tc=25˚C VG=5.0V 40 VG=4.0V 20 VG=3.0V 0 1 2 3 4 5 VDS . Drain-to-Source Voltage(V) 6 VG=3.0V 0 7 TC=25˚C 2 3 4 5 VDS . Drain-to-Source Voltage(V) 6 7 Fig.2 Typical Output Characteristics ID=18A VG=10V 1.60 1.40 27 25 1.20 23 1.00 21 0.80 19 17 0 1 Normalized R DS(ON) 29 0 1.80 ID=18A 31 R DSON (mΩ) VG=10V VG=7.0V VG=6.0V 60 FIG.1 Typical Output Characteristics 4 5 6 7 8 VGS (V) 9 10 11 12 0.60 -50 Fig.3 On-Resistance v.s. Gate Voltage 0 Tj 50 100 150 Fig.4 Normalized OnResistance 40 60 35 50 30 40 25 PD (W) ID,Dream Current(A) Tc=150˚C 20 15 30 20 10 10 5 0 25 50 Tj 75 100 150 0 150 http://www.weitron.com.tw 50 Tj 75 100 150 150 Fig.6 Type Power Dieeipation Fig.5 Maximum Drain Current v.s. Case Temperature WEITRON 25 4/6 12-Jul-07 WTD40N03 10 Normalized Thermal Response(Rthjc) 100 100 ID(A) 10us 100us 1ms 10 10ms D=0.01 Ta 1 100ms 1 10 0.2 PDM 0.05 t SINGLE PULSE 0.02 T 0.01 Duty factor = t / T Peak Tj=PDM x Rthjc + TC 0.01 0.1 1 f=1.0MHz 10000 Id=20A 14 10 Fig 8. Effective Transient Thermal Impedance 16 VD=16V VD=20V 12 VD=24V C(pF) 10 8 1000 Ciss 6 Coss 4 2 Crss 1 0 5 10 15 20 25 30 QG , Total Gate Charge (nC) 35 100 40 1 5 9 13 17 VDS (V) 21 25 29 Fig 10. Typical Capacitance Characteristics Fig 9. Gate Charge Characteristics 3 100 Tj 10 VGS(th) (V) Tj IS (A) 0.1 0.1 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area VGS,Gate to Source Voltage (V) DUTY=0.5 0.01 0.00001 0.0001 0.001 100 VDS(V) 1 1 2 1 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0 1.5 VSD (V) Fig 11. Forward Charateristics of Reverse Diode WEITRON http://www.weitron.com.tw -50 Tj 0 50 100 150 Fig.12 Gate Threshold Voltage v.s. Junction Temperature 5/6 12-Jul-07 WTD40N03 D-PAK / (TO-252) Outline Dimension Unit:mm D-PAK E A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 6/6 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 12-Jul-07