LRC LMGSF1N02LT1

LESHAN RADIO COMPANY, LTD.
Power MOSFET
750 mAmps, 20 Volts
LMGSF1N02LT1
N–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
3
1
2
SOT-23
N–Channel
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
± 20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
ID
IDM
750
2000
mA
Total Power Dissipation @ TA = 25°C
PD
400
mW
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
RθJA
300
°C/W
TL
260
°C
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
––
1
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
–
–
Vdc
–
–
–
–
1.0
10
–
–
±100
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
µAdc
nAdc
DEVICE MARKING
LMGSF1N02LT1=N2
LMGSF1N02LT1-1/4
LESHAN RADIO COMPANY, LTD.
LMGSF1N02LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
–
–
0.075
0.115
0.090
0.130
Characteristic
ON CHARACTERISTICS (Note 1.)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
–
125
–
Output Capacitance
(VDS = 5.0 Vdc)
Coss
–
120
–
Transfer Capacitance
(VDG = 5.0 Vdc)
Crss
–
45
–
td(on)
–
2.5
–
tr
–
1.0
–
td(off)
–
16
–
tf
–
8.0
–
QT
–
6000
–
pC
A
pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 Ω)
Turn–Off Delay Time
Fall Time
Gate Charge (See Figure 6)
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
IS
–
–
0.6
Pulsed Current
ISM
–
–
0.75
Forward Voltage (Note 2.)
VSD
–
0.8
–
Continuous Current
V
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
3
VDS = 10 V
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
2.5
2
-55°C
1.5
TJ = 150°C
1
0.5
0
1.5
2
2.5
3.25 V
3.5 V
2
VGS = 3.0 V
1.5
2.75 V
1
2.5 V
0.5
25°C
1
4V
2.5
2.25 V
3
3.5
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
9
10
LMGSF1N02LT1-2/4
LESHAN RADIO COMPANY, LTD.
0.2
150°C
0.18
0.16
VGS = 4.5 V
0.14
25°C
0.12
-55°C
0.1
0.08
0.06
0.04
0
0.1
0.3
0.2
0.4
0.5
0.6
0.7
0.8
0.9
1
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
LMGSF1N02LT1
0.14
0.13
150°C
0.12
VGS = 10 V
0.11
0.1
0.09
25°C
0.08
0.07
-55°C
0.06
0.05
0.04
0
0.2
0.4
0.6
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1.6
VGS = 10 V
ID = 2 A
1.4
1.3
VGS = 4.5 V
ID = 1 A
1.2
1.1
1
0.9
0.8
0.7
0.6
-55
-5
45
95
10
8
1.6
1.4
1.8
2
6
4
0
145
ID = 2.0 A
2
0
1000
2000
3000
4000
6000
5000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
Figure 5. On–Resistance Variation with Temperature
1
1000
TJ = 150°C
0.1
25°C
-55°C
C, CAPACITANCE (pF)
I D , DIODE CURRENT (AMPS)
1.2
VDS = 16 V
TJ = 25°C
TJ, JUNCTION TEMPERATURE (°C)
0.01
0.001
1
Figure 4. On–Resistance versus Drain Current
Figure 3. On–Resistance versus Drain Current
1.5
0.8
ID, DRAIN CURRENT (AMPS)
0
0.2
0.4
0.6
0.8
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
1
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
100
Coss
Crss
10
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 8. Capacitance
LMGSF1N02LT1-3/4
LESHAN RADIO COMPANY, LTD.
LMGSF1N02LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LMGSF1N02LT1-4/4