RB520S-40 200mA Surface Mount Schottky Barrier Diode Features · Ultra small mold type.(EMD2) · Low l R L · High reliability C H Mechanical Data · Case: Molded Plastic M A K B SOD-523 Dim Min Max A 0.25 0.35 B 0.70 0.90 C 1.50 1.70 H 1.10 1.30 K 0.55 0.65 L 0.10 0.30 M 0.10 0.12 All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter @ TA = 25°C unless otherwise specified Limits Symbol VRM VR Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Unit V V mA 40 40 200 Io Forward current surge peak IFSM 1 A Junction temperature Storage temperature Tj Tstg 125 -40 to +125 ℃ ℃ Parameter Forward voltage Reverse current Symbol VF VF IR Min. - Typ. - Max. 0.39 0.55 1 Unit V V µA IR - - 10 µA 1of3 Conditions IF=10mA IF=100mA VR=10V VR=40V 1000 1000 Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 0 40 AVE:491.2mV 470 800 600 500 400 AVE:67.0nA 200 25 20 15 AVE:23.2pF 10 5 0 Ct DISPERSION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 8.3ms 15 AVE:5.60A 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 10 30 IR DISPERSION MAP 30 20 35 0 VF DISPERSION MAP 25 40 100 460 Ifsm 8.3ms 8.3ms 1cyc 5 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.3 Mounted on epoxy board IM=1mA IF=200mA 30 Ta=25℃ f=1MHz VR=0V n=10pcs 45 700 300 20 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 480 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=10V n=30pcs 900 490 10000 30 1000 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) Ifsm t 10 5 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 1ms time Rth(j-a) 300us Rth(j-c) 100 FORWARD POWER DISSIPATION:Pf(W) 0.008 1000 D=1/2 REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 510 500 10 1 0.0001 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHｚ 100 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 REVERSE CURRENT:IR(μA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.2 Sin(θ＝180) DC 0.1 DC 0.006 D=1/2 0.004 Sin(θ＝180) 0.002 10 0.001 0 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2of3 0.5 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 0.5 0.4 t DC T 0.3 VR D=t/T VR=20V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 t 0.4 DC T VR D=t/T VR=20V Tj=125℃ 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 3of3 125