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RB162M-40
1.0A Surface Mount Schottky Barrier Diode
Features
·Small power mold type.(PMDU)
· Low IR
C
H
· High reliability
A
B
Mechanical Data
K
M
· Case: Molded Plastic
L
SOD-123
Dim
Min
Max
A
0.55 Typ
B
1.40
1.70
C
3.55
3.85
H
2.55
2.85
J
0.00
0.10
K
1.00
1.35
L
0.25
0.40
M
0.10
0.15
0
8°
α
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Parameter
@ TA = 25°C unless otherwise specified
Limits
40
40
1
30
150
-40 to +150
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
0.55
Unit
V
Reverse current
IR
-
-
100
μA
(*1)Mounting on epoxi board. (Tc=100°C MAX )
1of3
Unit
V
V
A
A
℃
℃
Conditions
IF=1A
VR=40V
Ta=150C
1000
10000
Ta=125C
100
Ta=-25C
Ta=25C
10
Ta=75C
Ta=125C
Ta=75C
100
10
Ta=25C
1
Ta=-25C
0.1
0.01
0.001
1
0
0
100
200
300
400
500
20
40
AVE : 517.1mV
AVE:349.9mV
Ta=25C
VR=40V
n=30pcs
8
7
6
5
4
AVE : 2.0A
3
2
1
0
500
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
REVERSE CURRENT : IR(A)
520
0
1cyc
150
8.3ms
100
AVE : 68.8A
Ta=25,80C
IF=0.5A
IR=1A
Irr=0.25*IR
n=20pcs
25
20
15
10
5
AVE : 7.8ns
25C
1000
50
0
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
35
180
AVE : 181.3pF
170
160
AVE : 10.2ns
1000
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
IF=0.5A
D=1/2
0.9
Rth(j-a)
100
100
On glass-epoxy board
1ms
DC
0.8
tim
FORWARD POWER
DISSIPATION : Pf(W)
100
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
t
30
190
80C
IM=10mA
Ifsm
25
Ta=25C
f=1MHz
n=20pcs
trr DISPERSION MAP
150
20
30
IFSM DISPERSION MAP
200
15
200
0
0
10
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Ifsm
RESERVE RECOVERY TIME : trr(ns)
200
5
210
IR DISPERSION MAP
VF DISPERSION MAP
50
1
220
9
530
510
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
10
Ta=25℃
Ta=25C
IF=1A
IF=1.0A
n=30pcs
n=30pcs
540
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
550
PEAK SURGE
FORWARD CURRENT : IFSM(A)
30
f=1MHz
600
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
10
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
1000
1000
REVERSE CURRENT : IR(A)
FORWARD CURRENT : IF(mA)
Ta=150C
300s
Rth(j-c)
10
1
0.7
0.6
Sin(=180)
0.5
0.4
0.3
0.2
0.1
0.1
0.001
0
0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
2of3
1000
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2
Io
0A
0V
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
REVERSE POWER
DISSIPATION : PR (W)
0.15
0.1
D=1/2
DC
0.05
Sin(=180)
T
D=t/T
VR=20V
Tj=150C
1.5
D=1/2
1
Sin(=180)
0.5
2
VR
t
DC
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.2
0A
Io
0V
VR
t
DC
T
D=t/T
VR=20V
Tj=150C
1.5
D=1/2
1
Sin(=180)
0.5
On glass-epoxy board
On glass-epoxy board
0
0
0
0
10
20
30
REVERSE VOLTAGE : V R(V)
VR-PR CHARACTERISTICS
40
0
25
50
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
30
25
20
15
10
5
AVE : 6.2kV
0
C=200pF
R=0
75
C=100pF
R=1.5k
ESD DISPERSION MAP
3of3
150
0
25
50
75
100
125
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
150