RB162M-40 1.0A Surface Mount Schottky Barrier Diode Features ·Small power mold type.(PMDU) · Low IR C H · High reliability A B Mechanical Data K M · Case: Molded Plastic L SOD-123 Dim Min Max A 0.55 Typ B 1.40 1.70 C 3.55 3.85 H 2.55 2.85 J 0.00 0.10 K 1.00 1.35 L 0.25 0.40 M 0.10 0.15 0 8° α All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Parameter @ TA = 25°C unless otherwise specified Limits 40 40 1 30 150 -40 to +150 Symbol VRM VR Io IFSM Tj Tstg Forward voltage Symbol VF Min. - Typ. - Max. 0.55 Unit V Reverse current IR - - 100 μA (*1)Mounting on epoxi board. (Tc=100°C MAX ) 1of3 Unit V V A A ℃ ℃ Conditions IF=1A VR=40V Ta=150C 1000 10000 Ta=125C 100 Ta=-25C Ta=25C 10 Ta=75C Ta=125C Ta=75C 100 10 Ta=25C 1 Ta=-25C 0.1 0.01 0.001 1 0 0 100 200 300 400 500 20 40 AVE : 517.1mV AVE:349.9mV Ta=25C VR=40V n=30pcs 8 7 6 5 4 AVE : 2.0A 3 2 1 0 500 CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(A) 520 0 1cyc 150 8.3ms 100 AVE : 68.8A Ta=25,80C IF=0.5A IR=1A Irr=0.25*IR n=20pcs 25 20 15 10 5 AVE : 7.8ns 25C 1000 50 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 35 180 AVE : 181.3pF 170 160 AVE : 10.2ns 1000 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 IF=0.5A D=1/2 0.9 Rth(j-a) 100 100 On glass-epoxy board 1ms DC 0.8 tim FORWARD POWER DISSIPATION : Pf(W) 100 TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) t 30 190 80C IM=10mA Ifsm 25 Ta=25C f=1MHz n=20pcs trr DISPERSION MAP 150 20 30 IFSM DISPERSION MAP 200 15 200 0 0 10 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm RESERVE RECOVERY TIME : trr(ns) 200 5 210 IR DISPERSION MAP VF DISPERSION MAP 50 1 220 9 530 510 10 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 10 Ta=25℃ Ta=25C IF=1A IF=1.0A n=30pcs n=30pcs 540 100 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 550 PEAK SURGE FORWARD CURRENT : IFSM(A) 30 f=1MHz 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE : VF(mV) 10 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 1000 REVERSE CURRENT : IR(A) FORWARD CURRENT : IF(mA) Ta=150C 300s Rth(j-c) 10 1 0.7 0.6 Sin(=180) 0.5 0.4 0.3 0.2 0.1 0.1 0.001 0 0.01 0.1 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS 2of3 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2 Io 0A 0V 2 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) REVERSE POWER DISSIPATION : PR (W) 0.15 0.1 D=1/2 DC 0.05 Sin(=180) T D=t/T VR=20V Tj=150C 1.5 D=1/2 1 Sin(=180) 0.5 2 VR t DC AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.2 0A Io 0V VR t DC T D=t/T VR=20V Tj=150C 1.5 D=1/2 1 Sin(=180) 0.5 On glass-epoxy board On glass-epoxy board 0 0 0 0 10 20 30 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS 40 0 25 50 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 100 125 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) 30 25 20 15 10 5 AVE : 6.2kV 0 C=200pF R=0 75 C=100pF R=1.5k ESD DISPERSION MAP 3of3 150 0 25 50 75 100 125 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 150