Ds19005_R9.vp DATASHEET SEARCH SITE | WWW

RB530S-30
100mA Surface Mount Schottky Barrier Diode
Features
· Ultra small mold type.(EMD2)
· Low I R
L
· High reliability
C
H
Mechanical Data
· Case: Molded Plastic
M
A
K
B
SOD-523
Dim
Min
Max
A
0.25
0.35
B
0.70
0.90
C
1.50
1.70
H
1.10
1.30
K
0.55
0.65
L
0.10
0.30
M
0.10
0.12
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage(DC)
Average rectified forward current
Forward current surge peak(60Hz/1cyc)
Junction temperature
Storage temperature
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
Symbol
VR
Io
IFSM
Tj
Tstg
Min.
Unit
V
mA
mA
30
100
500
125
-40to+125
Typ.
Max.
-
0.45
-
@ TA = 25°C unless otherwise specified
-
0.5
1of3
C
C
Unit
V
μA
Conditions
IF=10mA
VR=10V
100
1000000
1000
10
Ta=75C
1
Ta=-25C
0.1
Ta=25C
0.01
Ta=75C
10000
1000
Ta=25C
100
10
Ta=-25C
1
100
200
300
400
500
0
600
10
370
Ta=25C
VF=10mA
n=30pcs
0
350
340
AVE : 347.5mV
330
800
600
500
400
300
AVE : 108.3nA
200
17
16
15
AVE : 16.28pF
14
13
12
100
11
0
10
Ct DISPERSION MAP
10
8.3ms
10
AVE : 4.20A
5
10
PEAK SURGE
FORWARD CURRENT : I FSM(A)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1cyc
Ifsm
8.3ms
8.3ms
1cyc
5
0
0
Ifsm
t
5
0
1
10
100
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
1000
0.02
DC
0.08
Rth(j-c)
10
D=1/2
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : Pf(W)
Rth(j-a)
100
0.06
Sin(=180)
0.04
0.02
0.015
0.01
DC
0.005
Sin(=180)
1
0.001
20
Ta=25C
f=1MHz
VR=0V
n=10pcs
18
IR DISPERSION MAP
15
15
19
700
VF DISPERSION MAP
20
10
20
Ta=25C
VR=10V
n=30pcs
900
320
Ifsm
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1000
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
1
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
360
20
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
0
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
0.1
0.001
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
f=1MHz
100000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
100
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=125
Ta=125C
D=1/2
0
0.01
0.1
1
10
100
1000
0
0.05
0.1
0.15
0.2
0
0
TIME : t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2of3
5
10
15
20
25
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
30
0.3
Io
0A
0V
VR
t
DC
0.2
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.3
Io
0A
0V
VR
t
0.2
T
D=t/T
VR=15V
Tj=125C
100
125
DC
D=1/2
0.1
Sin(=180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
0
25
50
75
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3of3