WTPB16A60SW Sensi sittive Gate Bi-Dir ect ode Thyri st or ire ctiional Tri Trio rist sto Fea eattures ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=16A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A ■ High Commutation dV/dt. ■Halogen free(WTPB16A60SW-HF) ri pti on General Desc escri rip tio General purpose swiTJhing and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. im um Rati ng s Absolute Max axim imu ting ngs Symbol (TJ=25℃ unless otherwise specified) Parameter VDRM /VPRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, TJ=58℃) ITSM Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) I2t Circuit Fusing Considerations (tp= 10 ms) PGM PG(AV) Units 600 V 16 A 160/168 A 144 A2s Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us) 5 W Average Gate Power — Forward, (Over any 20ms period) 1 W 50 A/μs IFGM Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS) VRGM Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS) TJ, Tstg dI/dt Value (Note 1) 4 A 10 V Junction Temperature -40~125 ℃ Storage Temperature -40~150 ℃ te1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may No Note1: swiTJh to the on-state. The rate of rise of current should not exceed 15A/us. erm al Ch arac sti cs Th The rmal Cha actteri ris tics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.6 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 60 ℃/W Rev. C Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 WTPB16A60SW tri cal Ch arac sti cs (TJ = 25°C unless otherwise specified) Elec ectri trical Cha actteri ris tics Characteristics Symbol IDRM//IRRM VTM VGT Typ. Max Unit Peak Forward or Reverse Blocking Current TJ=25℃ - - 5 μA (V DRM=V RRM,) TJ=125℃ - - 1 mA - - 1.55 V T2+G+ - - 10 T2+G- - - 10 T2-G- - - 10 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 Forward “On” Voltage (Note2) (ITM = 22.5A tp=380μs) Gate Trigger Current (Continuous dc) IGT Min (VD = 12 Vdc, RL = 33 Ω) Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33 Ω) mA V VGD Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM) 40 - - V/μs - - 15 mA T2+G+ - - 25 T2+G- - - 30 T2-G- - - 25 - - 25 IH Holding Current (IT= 100 mA) Latching current IL Rd (VD =12 Vdc,IGT=0.1A) Dynamic resistance mA mΩ Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/6 Steady, keep you advance WTPB16A60SW Fig Fig..1 Fig Fig..3 Fig Fig..5 Fig Fig..2 Fig Fig..4 Fig Fig..6 3/6 Steady, keep you advance WTPB16A60SW Fig.7 Fig Fig..8 Fig Fig..9 ger Ch arac sti cs Te st Cir cuit Fig Fig..10 Gate Trig Trigg Cha actteri ris tic Tes Circ 4/6 Steady, keep you advance WTPB16A60SW Marking layout - : Winsemi Semiconductor Logo S : IGT ∆ : W:The third quadrant Null : The fourth quadrant □ Part No. S∆ WWYY WW : Weekly code(01-52) YY : Last two digit of calendar year (11:2011;12:2012) □ : HF Null Halogen free Halogen 5/6 Steady, keep you advance WTPB16A60SW 20 Pack age Dim ension TO-2 -22 cka Dime Uni Unitt: mm 5/6 Steady, keep you advance