WFY03DN50 V N−Channel Depletion-Mode DMOSFET 500 500V Features ■ 30mA, 500V, RDS(on)(Max750Ω)@VGS=0,ID=3.0mA ■ Free from secondary breakdown ■ Low power drive requirement ■ Integral source-drain diode ■ Ease of paralleling ■ Excellent thermal stability ■ High input impedance and low CISS D General Description The WFY03DN50 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Winsemi’s lateral DMOS technology. The WFY03DN50 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. G S SOT-23 Absolute Maximum Ratings(Tc=25℃ unless otherwise noted) Symbol Parameter VDSS Drain Source Voltage ID Continuous Drain Current(Note 1) Value Units 500 V 30 mA Tc=75℃ 24 IDM Drain Current Pulsed 120 mA PD Total Power Dissipation 0.5 W VGS Gate to Source Voltage ±20 V dv/dt Peak Diode Recovery Voltage Rising Rate 5 V/ns TJ, Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 TL Maximum lead Temperature for soldering purposes 300 ℃ Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJC Parameter Thermal Resistance, Junction-to-Ambient(Note 2) Thermal Resistance, Junction-to-Case(Note 2) Value Min Typ Max - - 250 200 Units ℃/W ℃/W Note 1: ID (continuous) is limited by max rated Tj. Note 2:Mounted on FR4 board, 25mm x 25mm x 1.57mm Rev. A/0 Mar.2012 Copyright@Winsemi Mircroeletronicx Co.,Ltd.,All rights reserved. T22-1 WFY03DN50 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit - - ±100 nA - - 0.1 OFF Characteristics Gate leakage current IGSS VGS = ±20 V, VDS = 0 V Drain cut−off current IDSS VDS = 500 V, VGS = -5 V μA Tc=125°C Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 10 500 - - V On Characteristics Drain on-sta current ID VDS = 25V VGS= 0V 1 - - mA Gate-Source off voltage VGS(off) VDS = 25V ID=100nA -3 -2 -1 V VGS = 0 V, ID = 0.5mA - 350 750 Drain−Source ON resistance RDS(ON) 360 850 Ω VGS = 10 V, ID = 16mA Dynamic Characteristics Forward Transconductance gfs VDS = 0 V, ID = 1mA 1 2 - Input capacitance Ciss VGS = -10V, - 7.5 10 Reverse transfer capacitance Crss VDS = 25V, - 0.5 1.0 Output capacitance Coss f = 1.0MHz - 2.0 3.5 Turn-on Delay time td(on) ID =10mA - 6.2 - Turn−on Rise time tr VDD = 300V - 53 - Turn-off Delay time td(off) VGS = -5 ~ 7V - 56 - tf RG = 6.0Ω - 128 - Total gate charge Qg ID =10mA - 1.1 - Gate−source charge Qgs VDD =400V - 0.5 - Gate−drain (“miller”) Charge Qgd VGS = -5V ~ 5V - 0.3 - mS pF Switching Characteristics Switching time ns (Note 4) Turn−off Fall time nC −Drain Ratings and Characteristics (Ta = 25°C) Source Source− Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 25 mA Pulse drain reverse current IDRP - - - 100 mA Forward voltage (diode) VDSF IDR=1mA, VGS= -10V - 0.76 0.9 V Reverse Recovery Time trr - 200 - ns - 636 - nC - 5.3 - A IDR=1mA, VGS= -10V Reverse Recovery Charge Qrr dIDR/dt=100A/us Reverse Recovery Current IRRM Note 3: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 4: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/5 Steady, keep for your advance WFY03DN50 Typical Performance Cures 3/5 Steady, keep for your advance WFY03DN50 4/5 Steady, keep for your advance WFY03DN50 SOT-23 Package Dimension MILLIMTERS DIM A A1 B C D E F G H I J MIN INCHES MAX MIN 0.95 1.90 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 50o MAX 0.037 0.074 3.00 1.70 3.10 1.30 0.10 0.50 0.20 0.60 10o 0.102 0.055 0.110 0.039 0.000 0.014 0.004 0.012 50o 5/5 Steady, keep for your advance 0.118 0.067 0.122 0.051 0.004 0.020 0.008 0.024 10o