KEXIN KPA2790GR

IC
IC
SMD Type
MOS Field Effect Transistor
KPA2790GR
Features
Low on-state resistance
N-channel RDS(on)1 = 28 m
MAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 = 40 m
MAX. (VGS = 4.5 V, ID = 3 A)
P-channel RDS(on)1 = 60 m
RDS(on)2 = 80 m
MAX. (VGS = -10 V, ID = -3 A)
MAX. (VGS = -4.5 V, ID = -3 A)
Low input capacitance
N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
Built-in gate protection diode
Small and surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Symbol
N-Channel
P- Channel
Unit
VDSS
30
-30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
ID(DC)
ID(pulse)
Drain Current (pulse) *1
20
V
6
6
A
24
24
A
20
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation (2 units) *2
PT
2
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
Single Avalanche Current *3
IAS
6
-6
A
Single Avalanche Energy *3
EAS
3.6
3.6
mJ
*1 PW
10
s, Duty Cycle
-55 to +150
1%
*2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
*3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25
, L = 100
H, VGS = VGSS
0V
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1
IC
IC
SMD Type
KPA2790GR
Electrical Characteristics Ta = 25
Parameter
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
| yfs |
-10
VGS =
16 V, VDS = 0 V
N-Ch
10
VGS =
16 V, VDS = 0 V
P- Ch
10
VDS = 10 V, ID = 1 mA
N-Ch
1.5
2.5
VDS = -10 V, ID = -1 mA
P- Ch
-1.0
-2.5
VDS = 10 V, ID = 3 A
N-Ch
2
VDS = -10 V, ID = -3 A
P- Ch
2
RDS(on)3
S
m
m
VGS = 4.0 V, ID = 3 A
34
53
m
RDS(on)1
VGS = -10 V, ID = -3 A
43
60
m
RDS(on)2
VGS = -4.5 V, ID = -3 A
P- Ch
58
80
m
RDS(on)3
VGS = -4.0 V, ID = -3 A
65
110
m
N-Channel
N-Ch
500
VDS = 10 V,VGS = 0 V,f = 1 MHz
P- Ch
460
N-Ch
135
P- Ch
130
td(on)
tr
td(off)
tf
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
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V
40
VF(S-D)
N-Ch
P- Channel
VDS = -10 V,VGS = 0 V,f = 1 MHz
N-Ch
77
P- Ch
77
N-Channel
N-Ch
9.2
VDD = 15 V, ID = 3 A,VGS = 10 V
P- Ch
8.5
RG = 10
8.8
4.8
N-Ch
28
VDD = -15 V, ID = -3 A,VGS = -10 V
P- Ch
42
N-Ch
7.4
P- Ch
19
N-Channel
N-Ch
12.6
ID = 6 A,VDD = 24 V,VGS = 10 V
P- Ch
11
N-Ch
1.7
P- Channel
P- Ch
1.7
ID = -6 A,VDD = -24 V,VGS = -10 V
N-Ch
3.8
P- Ch
3.3
RG = 10
IF = 6 A, VGS = 0 V
N-Ch
0.85
IF = 6 A, VGS = 0 V
P- Ch
0.92
N-Ch
18
P- Ch
21
trr
Qrr
N-Ch
P- Ch
P- Channel
IF = 6 A, VGS = 0 V,di/dt = 100 A/
2
A
28
Turn-on Delay Time
Reverse Recovery Charge
A
28
Crss
Reverse Recovery Time
P- Ch
Unit
21
Reverse Transfer Capacitance
Body Diode Forward Voltage Note
VDS = -30 V, VGS = 0 V
VGS = 4.5 V, ID = 3 A
Coss
Total Gate Charge
Max
10
VGS = 10 V, ID = 3 A
Output Capacitance
Fall Time
Typ
N-Ch
RDS(on)2
Ciss
Turn-off Delay Time
Min
VDS = 30 V, VGS = 0 V
RDS(on)1
Input Capacitance
Rise Time
Testconditons
Symbol
s
N-Ch
11
P- Ch
12
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC