Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.50 -- V/°C 1 µA IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- VDS = 320 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.44 0.55 Ω -- 9.0 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A gFS Forward Transconductance VDS = 40 V, ID = 5.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF -- 150 195 pF -- 15 20 pF -- 25 60 ns -- 75 160 ns -- 115 240 ns -- 70 150 ns -- 38 50 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200V, ID = 10.0 A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 10.0A, VGS = 10 V (Note 4, 5) -- 8 -- nC -- 13 -- nC 10 A A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.0 A Drain-Source Diode Forward Voltage -- -- 40 VSD -- -- 1.5 V trr Reverse Recovery Time -- 225 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 10.0 A, dIF / dt = 100 A/µs -- 1.59 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.9mH, IAS = 10.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature (Note 4) Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.0 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 2.4 VGS = 10V 1.6 VGS = 20V 1.2 0.8 0.4 1 10 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 2000 Capacitance [pF] 35 Ciss 1500 Coss 1000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] 0.0 VDS = 80V 10 VDS = 200V VDS = 320V 8 6 4 2 ※ Note : ID = 10 A 0 -1 10 0 0 10 1 10 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 10 µs ID, Drain Current [A] ID, Drain Current [A] 8 100 µs 1 ms 1 10 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 4 2 -1 10 6 1 2 10 0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area Zθ JC(t), Thermal Response 10 75 100 125 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C (t) = 0 .9 3 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 10 t1 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve 10 1 150 Gate Charge Test Circuit & Waveform V G S S am eT ype asD U T 50K Ω 200nF 12V Q g 10V 300nF V D S V G S Q gs Q gd D U T 3m A C harge Resistive Switching Test Circuit & Waveforms V D S R G R L V D S 9 0 % V D D V G S 1 0 % V G S D U T 1 0 V t d ( o n ) t r t d ( o ff) to n t f to ff Unclamped Inductive Switching Test Circuit & Waveforms B V D S S 1 2------------------=---- L IA E A S S 2 -V B V D S S D D L V D S B V D S S IA S ID R G 1 0 V tp V D D D U T ID(t) V (t) D S V D D tp T im e Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v /d t c o n tr o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v /d t V SD B o d y D io d e F o r w a r d V o lta g e D r o p V DD TO-220 Package Dimension Dim. mm Typ. Min. 9.7 6.3 9.0 12.8 1.2 A B C D E F G H I J K L M N O Max. 10.1 6.7 9.47 13.3 1.4 Inch Typ. Min. 0.382 0.248 0.354 0.504 0.047 1.7 2.5 0.067 0.098 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 Ø 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 3.6 E B 0.142 H A φ I F C M L G 1 D 2 1. Gate 2. Drain 3. Source 3 J N K Max. 0.398 0.264 0.373 0.524 0.055 O WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com