LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 LM1875 20W Audio Power Amplifier Check for Samples: LM1875 FEATURES DESCRIPTION • • • • • The LM1875 is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications. 1 2 • • • • • • Up to 30 Watts Output Power AVO Typically 90 dB Low Distortion: 0.015%, 1 kHz, 20 W Wide Power Bandwidth: 70 kHz Protection for AC and DC Short Circuits to Ground Thermal Protection with Parole Circuit High Current Capability: 4A Wide Supply Range 16V-60V Internal Output Protection Diodes 94 dB Ripple Rejection Plastic Power Package TO-220 APPLICATIONS • • • • • High Performance Audio Systems Bridge Amplifiers Stereo Phonographs Servo Amplifiers Instrument Systems The LM1875 delivers 20 watts into a 4Ω or 8Ω load on ±25V supplies. Using an 8Ω load and ±30V supplies, over 30 watts of power may be delivered. The amplifier is designed to operate with a minimum of external components. Device overload protection consists of both internal current limit and thermal shutdown. The LM1875 design takes advantage of advanced circuit techniques and processing to achieve extremely low distortion levels even at high output power levels. Other outstanding features include high gain, fast slew rate and a wide power bandwidth, large output voltage swing, high current capability, and a very wide supply range. The amplifier is internally compensated and stable for gains of 10 or greater. Connection Diagram Figure 1. NDH0005D, KC0005A, NEB0005E, NEB0005B, Front View 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004, Texas Instruments Incorporated LM1875 SNAS524A – MAY 2004 – REVISED MAY 2004 www.ti.com Typical Applications These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) Supply Voltage 60V −VEE to VCC Input Voltage −65°C to + 150°C Storage Temperature Junction Temperature 150°C (Soldering, 10 seconds) Lead Temperature (1) 2 260°C θJC 3°C θJA 73°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 Electrical Characteristics VCC=+25V, −VEE=−25V, TAMBIENT=25°C, RL=8Ω, AV=20 (26 dB), fo=1 kHz, unless otherwise specified. Parameter Conditions Typical Tested Limits Units 100 mA Supply Current POUT=0W 70 Output Power (1) THD=1% 25 THD (1) POUT=20W, fo=1 kHz 0.015 POUT=20W, fo=20 kHz 0.05 POUT=20W, RL=4Ω, fo=1 kHz 0.022 POUT=20W, RL=4Ω, fo=20 kHz 0.07 0.6 % ±1 ±15 mV ±0.2 ±2 μA 0 ±0.5 Offset Voltage Input Bias Current Input Offset Current W % 0.4 % Gain-Bandwidth Product fo=20 kHz 5.5 Open Loop Gain DC 90 PSRR VCC, 1 kHz, 1 Vrms 95 52 VEE, 1 kHz, 1 Vrms 83 52 Max Slew Rate 20W, 8Ω, 70 kHz BW 8 Current Limit VOUT = VSUPPLY −10V 4 Equivalent Input Noise Voltage RS=600Ω, CCIR 3 (1) % μA MHz dB dB dB V/μs 3 A μVrms Assumes the use of a heat sink having a thermal resistance of 1°C/W and no insulator with an ambient temperature of 25°C. Because the output limiting circuitry has a negative temperature coefficient, the maximum output power delivered to a 4Ω load may be slightly reduced when the tab temperature exceeds 55°C. Typical Applications For Single Supply Operation Figure 2. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 3 LM1875 SNAS524A – MAY 2004 – REVISED MAY 2004 www.ti.com Typical Performance Characteristics THD vs Power Output THD vs Frequency Figure 3. Figure 4. Power Output vs Supply Voltage Supply Current vs Supply Voltage Figure 5. Figure 6. PSRR vs Frequency Device Dissipation vs Ambient Temperature† †φINTERFACE = 1°C/W. See Application Hints. Figure 7. 4 Figure 8. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 Typical Performance Characteristics (continued) Power Dissipation vs Power Output Power Dissipation vs Power Output Figure 9. Figure 10. IOUT vs VOUT-Current Limit/ Safe Operating Area Boundary Open Loop Gain and Phase vs Frequency Figure 11. Thermal shutdown with infinite heat sink Thermal shutdown with 1°C/W heat sink Figure 12. Input Bias Current vs Supply Voltage Figure 13. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 5 LM1875 SNAS524A – MAY 2004 – REVISED MAY 2004 www.ti.com Schematic Diagram 6 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 APPLICATION HINTS STABILITY The LM1875 is designed to be stable when operated at a closed-loop gain of 10 or greater, but, as with any other high-current amplifier, the LM1875 can be made to oscillate under certain conditions. These usually involve printed circuit board layout or output/input coupling. Proper layout of the printed circuit board is very important. While the LM1875 will be stable when installed in a board similar to the ones shown in this data sheet, it is sometimes necessary to modify the layout somewhat to suit the physical requirements of a particular application. When designing a different layout, it is important to return the load ground, the output compensation ground, and the low level (feedback and input) grounds to the circuit board ground point through separate paths. Otherwise, large currents flowing along a ground conductor will generate voltages on the conductor which can effectively act as signals at the input, resulting in high frequency oscillation or excessive distortion. It is advisable to keep the output compensation components and the 0.1 μF supply decoupling capacitors as close as possible to the LM1875 to reduce the effects of PCB trace resistance and inductance. For the same reason, the ground return paths for these components should be as short as possible. Occasionally, current in the output leads (which function as antennas) can be coupled through the air to the amplifier input, resulting in high-frequency oscillation. This normally happens when the source impedance is high or the input leads are long. The problem can be eliminated by placing a small capacitor (on the order of 50 pF to 500 pF) across the circuit input. Most power amplifiers do not drive highly capacitive loads well, and the LM1875 is no exception. If the output of the LM1875 is connected directly to a capacitor with no series resistance, the square wave response will exhibit ringing if the capacitance is greater than about 0.1 μF. The amplifier can typically drive load capacitances up to 2 μF or so without oscillating, but this is not recommended. If highly capacitive loads are expected, a resistor (at least 1Ω) should be placed in series with the output of the LM1875. A method commonly employed to protect amplifiers from low impedances at high frequencies is to couple to the load through a 10Ω resistor in parallel with a 5 μH inductor. DISTORTION The preceding suggestions regarding circuit board grounding techniques will also help to prevent excessive distortion levels in audio applications. For low THD, it is also necessary to keep the power supply traces and wires separated from the traces and wires connected to the inputs of the LM1875. This prevents the power supply currents, which are large and nonlinear, from inductively coupling to the LM1875 inputs. Power supply wires should be twisted together and separated from the circuit board. Where these wires are soldered to the board, they should be perpendicular to the plane of the board at least to a distance of a couple of inches. With a proper physical layout, THD levels at 20 kHz with 10W output to an 8Ω load should be less than 0.05%, and less than 0.02% at 1 kHz. CURRENT LIMIT AND SAFE OPERATING AREA (SOA) PROTECTION A power amplifier's output transistors can be damaged by excessive applied voltage, current flow, or power dissipation. The voltage applied to the amplifier is limited by the design of the external power supply, while the maximum current passed by the output devices is usually limited by internal circuitry to some fixed value. Shortterm power dissipation is usually not limited in monolithic audio power amplifiers, and this can be a problem when driving reactive loads, which may draw large currents while high voltages appear on the output transistors. The LM1875 not only limits current to around 4A, but also reduces the value of the limit current when an output transistor has a high voltage across it. When driving nonlinear reactive loads such as motors or loudspeakers with built-in protection relays, there is a possibility that an amplifier output will be connected to a load whose terminal voltage may attempt to swing beyond the power supply voltages applied to the amplifier. This can cause degradation of the output transistors or catastrophic failure of the whole circuit. The standard protection for this type of failure mechanism is a pair of diodes connected between the output of the amplifier and the supply rails. These are part of the internal circuitry of the LM1875, and needn't be added externally when standard reactive loads are driven. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 7 LM1875 SNAS524A – MAY 2004 – REVISED MAY 2004 www.ti.com THERMAL PROTECTION The LM1875 has a sophisticated thermal protection scheme to prevent long-term thermal stress to the device. When the temperature on the die reaches 170°C, the LM1875 shuts down. It starts operating again when the die temperature drops to about 145°C, but if the temperature again begins to rise, shutdown will occur at only 150°C. Therefore, the device is allowed to heat up to a relatively high temperature if the fault condition is temporary, but a sustained fault will limit the maximum die temperature to a lower value. This greatly reduces the stresses imposed on the IC by thermal cycling, which in turn improves its reliability under sustained fault conditions. Since the die temperature is directly dependent upon the heat sink, the heat sink should be chosen for thermal resistance low enough that thermal shutdown will not be reached during normal operation. Using the best heat sink possible within the cost and space constraints of the system will improve the long-term reliability of any power semiconductor device. POWER DISSIPATION AND HEAT SINKING The LM1875 must always be operated with a heat sink, even when it is not required to drive a load. The maximum idling current of the device is 100 mA, so that on a 60V power supply an unloaded LM1875 must dissipate 6W of power. The 54°C/W junction-to-ambient thermal resistance of a TO-220 package would cause the die temperature to rise 324°C above ambient, so the thermal protection circuitry will shut the amplifier down if operation without a heat sink is attempted. In order to determine the appropriate heat sink for a given application, the power dissipation of the LM1875 in that application must be known. When the load is resistive, the maximum average power that the IC will be required to dissipate is approximately: where • • • VS is the total power supply voltage across the LM1875 RL is the load resistance PQ is the quiescent power dissipation of the amplifier The above equation is only an approximation which assumes an “ideal” class B output stage and constant power dissipation in all other parts of the circuit. The curves of “Power Dissipation vs Power Output” give a better representation of the behavior of the LM1875 with various power supply voltages and resistive loads. As an example, if the LM1875 is operated on a 50V power supply with a resistive load of 8Ω, it can develop up to 19W of internal power dissipation. If the die temperature is to remain below 150°C for ambient temperatures up to 70°C, the total junction-to-ambient thermal resistance must be less than Using θJC=2°C/W, the sum of the case-to-heat-sink interface thermal resistance and the heat-sink-to-ambient thermal resistance must be less than 2.2°C/W. The case-to-heat-sink thermal resistance of the TO-220 package varies with the mounting method used. A metal-to-metal interface will be about 1°C/W if lubricated, and about 1.2°C/W if dry. If a mica insulator is used, the thermal resistance will be about 1.6°C/W lubricated and 3.4°C/W dry. For this example, we assume a lubricated mica insulator between the LM1875 and the heat sink. The heat sink thermal resistance must then be less than 4.2°C/W−2°C/W−1.6°C/W=0.6°C/W. This is a rather large heat sink and may not be practical in some applications. If a smaller heat sink is required for reasons of size or cost, there are two alternatives. [EM00001]The maximum ambient operating temperature can be reduced to 50°C (122°F), resulting in a 1.6°C/W heat sink, or the heat sink can be isolated from the chassis so the mica washer is not needed. This will change the required heat sink to a 1.2°C/W unit if the caseto-heat-sink interface is lubricated. 8 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 NOTE When using a single supply, maximum transfer of heat away from the LM1875 can be achieved by mounting the device directly to the heat sink (tab is at ground potential); this avoids the use of a mica or other type insulator. The thermal requirements can become more difficult when an amplifier is driving a reactive load. For a given magnitude of load impedance, a higher degree of reactance will cause a higher level of power dissipation within the amplifier. As a general rule, the power dissipation of an amplifier driving a 60° reactive load (usually considered to be a worst-case loudspeaker load) will be roughly that of the same amplifier driving the resistive part of that load. For example, a loudspeaker may at some frequency have an impedance with a magnitude of 8Ω and a phase angle of 60°. The real part of this load will then be 4Ω, and the amplifier power dissipation will roughly follow the curve of power dissipation with a 4Ω load. Component Layouts Figure 14. Split Supply Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 9 LM1875 SNAS524A – MAY 2004 – REVISED MAY 2004 www.ti.com Figure 15. Single Supply 10 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM1875 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LM1875T ACTIVE TO-220 NDH 5 45 TBD Call TI Call TI 0 to 70 LM1875T/LB02 ACTIVE TO-220 NEB 5 45 TBD Call TI Call TI LM1875T LM1875T/LB03 ACTIVE TO-220 NDH 5 45 TBD Call TI Call TI LM1875T LM1875T/LB05 ACTIVE TO-220 NEB 5 45 TBD Call TI Call TI LM1875T LM1875T/LF02 ACTIVE TO-220 NEB 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM LM1875T LM1875T/LF03 ACTIVE TO-220 NDH 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM LM1875T LM1875T/LF05 ACTIVE TO-220 NEB 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM LM1875T LM1875T/NOPB ACTIVE TO-220 NDH 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM 0 to 70 LM1875T LM1875T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. 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