CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD25483F4, 20 V P-Channel FemtoFET™ MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm Ultra-Low Profile – 0.35 mm Max Height Integrated ESD Protection Diode – Rated > 4 kV HBM – Rated > 2 kV CDM Lead and Halogen Free RoHS Compliant VDS Drain-to-Source Voltage –20 V Qg Gate Charge Total (–4.5 V) 959 pC Qgd Gate Charge Gate to Drain RDS(on) VGS(th) Drain-to-Source On Resistance • • pC 530 mΩ VGS = –2.5 V 338 mΩ VGS = –4.5 V 210 mΩ Threshold Voltage –0.95 V . Ordering Information Device Qty CSD25483F4 3000 CSD25483F4T 250 2 Applications • • 161 VGS = –1.8 V Media Package Ship 7-Inch Reel Femto (0402) 1.0 mm x 0.6 mm Land Grid Array (LGA) Tape and Reel . Absolute Maximum Ratings Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Battery Applications Handheld and Mobile Applications TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage –20 V VGS Gate-to-Source Voltage –12 V ID Continuous Drain Current(1) –1.6 A IDM Pulsed Drain Current(2) –6.5 A Continuous Gate Clamp Current –35 Pulsed Gate Clamp Current(2) –350 Power Dissipation(1) 500 mW 4 kV 2 kV –55 to 150 °C 3 Description IG This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. PD . Human Body Model (HBM) ESD Rating Charged Device Model (CDM) TJ, TSTG Operating Junction and Storage Temperature Range mA (1) Typical RθJA = 85°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% Typical Part Dimensions Top View m D 60 1. 0. 00 m m 5m 0.3 m m G S . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 www.ti.com 4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = –250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V –100 nA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –12 V –50 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = –250 μA RDS(on) gfs Drain-to-Source On Resistance Transconductance –20 –0.70 V –0.95 –1.20 V VGS = –1.8 V, IDS = –0.1 A 530 1070 mΩ VGS = –2.5 V, IDS = –0.5 A 338 390 mΩ VGS = –4.5 V, IDS = –0.5 A 210 245 mΩ VGS = –8 V, IDS = –0.5 A 175 205 mΩ VDS = –10 V, IDS = –0.5 A 1.4 S 198 pF 82 pF 5.8 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0 V, VDS = –10 V, f = 1 MHz VDS = –10 V, IDS = –0.5 A VDS = –10 V, VGS = 0 V VDS = 0 V, VGS = –4.5 V, IDS = –0.5 A,RG = 2 Ω 20 Ω 959 pC 160 pC 252 pC 122 pC 1081 pC 4.3 ns 3.7 ns 17.4 ns 7.0 ns Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = –0.5 A, VGS = 0 V VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs –0.75 V 1060 pC 7.5 ns 4.2 Thermal Characteristics (TA = 25°C unless otherwise stated) PARAMETER RθJA (1) (2) 2 Junction-to-Ambient Thermal Resistance Junction-to-Ambient Thermal Resistance 2 Typical Values (1) (2) UNIT 85 °C/W 245 °C/W 2 Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 CSD25483F4 www.ti.com SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 5 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 4 VGS = −8V VGS = −4.5V VGS = −2.5V VGS = −1.8V 3 − IDS - Drain-to-Source Current (A) − IDS - Drain-to-Source Current (A) 4 3.5 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 − VDS - Drain-to-Source Voltage (V) 1.6 1.8 VDS = −5V 3.5 3 2.5 2 1.5 1 TC = 125°C TC = 25°C TC = −55°C 0.5 0 0 G001 Figure 2. Saturation Characteristics 0.5 1 1.5 2 2.5 3 − VGS - Gate-to-Source Voltage (V) 3.5 Product Folder Links: CSD25483F4 G001 Figure 3. Transfer Characteristics Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated 4 3 CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 220 ID = −0.5A VDS = −10V 7 200 180 6 C − Capacitance (nF) − VGS - Gate-to-Source Voltage (V) 8 5 4 3 2 160 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 140 120 100 80 60 40 1 0 20 0 0.2 0.4 0.6 0.8 1 1.2 Qg - Gate Charge (nC) 1.4 1.6 0 1.8 0 2 4 6 8 10 12 14 16 − VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge RDS(on) - On-State Resistance (mΩ) − VGS(th) - Threshold Voltage (V) G001 600 ID = −250uA 1.15 1.05 0.95 0.85 0.75 0.65 0.55 0.45 −75 −25 25 75 125 TC - Case Temperature (ºC) 480 420 360 300 240 180 120 60 0 2 G001 4 6 8 10 − VGS - Gate-to- Source Voltage (V) 12 G001 Figure 7. On-State Resistance vs Gate-to-Source Voltage 1.4 10 − ISD − Source-to-Drain Current (A) VGS = −4.5V, ID = −0.5A 1.3 1.2 1.1 1 0.9 0.8 0.7 −75 TC = 25°C, I D = −0.5A TC = 125°C, I D = −0.5A 540 0 175 Figure 6. Threshold Voltage vs Temperature Normalized On-State Resistance 20 Figure 5. Capacitance 1.25 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 − VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs Temperature 4 18 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 CSD25483F4 www.ti.com SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 2.0 1ms 10ms 100ms 1s DC − IDS - Drain- to- Source Current (A) − IDS - Drain-to-Source Current (A) 100 10 1 0.1 Single Pulse Typical RthetaJA =245ºC/W(min Cu) 0.01 0.01 0.1 1 10 − VDS - Drain-to-Source Voltage (V) Figure 10. Maximum Safe Operating Area 50 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Typical RthetaJA = 85ºC/W(max Cu) 0.0 −50 G001 −25 0 25 50 75 100 125 TA - AmbientTemperature (ºC) 150 175 G001 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 5 CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 www.ti.com 6 Mechanical Data 6.1 0402 Mechanical Dimensions (1) All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994). (2) This drawing is subject to change without notice. (3) This package is a PB-free solder land design. Pin Configuration Position 6 Designation Pin 1 Gate Pin 2 Source Pin 3 Drain Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 CSD25483F4 www.ti.com SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 6.2 Recommended Minimum PCB Layout (1) All dimensions are in millimeters. 6.3 Recommended Stencil Pattern (1) All dimensions are in millimeters. Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 7 CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 www.ti.com 6.4 CSD25483F4 Embossed Carrier Tape Dimensions (1) 8 Pin 1 is oriented in the top-right quadrant of the tape enclosure (quadrant 2), closest to the carrier tape sprocket holes. Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 CSD25483F4 www.ti.com SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 7 Trademarks FemtoFET is a trademark of Texas Instruments. 8 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (December 2013) to Revision B Page • Added part number to title ..................................................................................................................................................... 1 • Updated lead and halogen free in features ........................................................................................................................... 1 • Added IG parameter ............................................................................................................................................................... 1 • Lowered IDSS limit .................................................................................................................................................................. 2 • Lowered IGSS limit .................................................................................................................................................................. 2 Changes from Original (October 2013) to Revision A Page • Updated title .......................................................................................................................................................................... 1 • Fixed resistance typo ............................................................................................................................................................. 1 • Added small reel .................................................................................................................................................................... 1 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25483F4 9 PACKAGE OPTION ADDENDUM www.ti.com 31-Jan-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CSD25483F4 ACTIVE PICOSTAR YJC 3 3000 Green (RoHS & no Sb/Br) Call TI Level-1-250C-UNLIM -40 to 85 CSD25483F4R PREVIEW PICOSTAR YJC 3 18000 TBD Call TI Call TI -40 to 85 DR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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