AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Standard product AO3401A is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = -30V (V GS = -10V) ID = -4.3A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) RDS(ON) < 80mW (V GS = -2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A,F Current TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Maximum -30 Units V ±12 V -4.3 -25 1.4 PD W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -3.8 ID IDM RθJA RθJL Typ 65 85 43 °C Max 90 125 80 Units °C/W °C/W °C/W www.aosmd.com AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C VGS=-10V, ID=-4.3A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge -1.3 V A VGS=-4.5V, ID=-3.5A 44 55 mΩ VGS=-2.5V, ID=-2.5A 62 80 mΩ VDS=-5V, ID=-4.3A 13 DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 44 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss ±100 63 Forward Transconductance Output Capacitance -1 µA 36 gFS Coss -5 52 TJ=125°C VSD IS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ -0.75 933 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4.3A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=6Ω IF=-4.3A, dI/dt=100A/µs mΩ S -1 V -2 A 1200 pF 108 pF 81 pF 6 9 Ω 9.3 12.2 nC 1.5 nC 3.7 nC 5.2 ns 6.8 ns 42 ns 15 ns 21 28 14.3 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t≤ 10s thermal resistance rating. Rev0: Apr.2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 -4.5V -10V VDS=-5V 8 -3V -2.5V 15 -ID(A) -ID (A) 20 10 5 6 4 125°C 25°C 2 VGS=-2V 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.6 VGS=-2.5V 80 60 VGS=-4.5V 40 VGS=-10V 20 ID=-3.5A, VGS=-4.5V ID=-4.3A, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-2.5A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 80 ID=-4.3A 1.0E+00 70 1.0E-01 125°C 60 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 50 40 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 30 1.0E-05 1.0E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1600 VDS=-15V ID=-4.3A Capacitance (pF) -VGS (Volts) 4 3 2 1200 1 0 0 3 6 9 Ciss 800 400 Coss 0 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 30 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 10s 0.1s 0.1 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 18 12 6 DC 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TA=25°C 24 Power (W) 10.0 ID (Amps) 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance Crss D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com