AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 D2 G1 G2 S1 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF Pulsed Drain Current TA=70°C ID IDM B TA=25°C Power Dissipation Avalanche Current B EAR Junction and Storage Temperature Range TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. V 3.4 2.7 2.7 2.1 2.5 1.6 1.6 1 IAR Repetitive avalanche energy 0.3mH B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C ±25 Units V A 15 PD TA=70°C Maximum 10 Sec Steady State 75 RθJA RθJL W 10 A 15 mJ -55 to 150 °C Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W www.aosmd.com AOP806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 1 5 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 15 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VGS=10V, ID=3.4A Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time nA 3 V A 108 132 198 VGS=4.5V, ID=2A 128 168 VDS=5V, ID=3.4A 10 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 2.3 µA 100 162 TJ=125°C Units V TJ=55°C ID(ON) Coss Max 75 VDS=75V, VGS=0V IDSS IS Typ 0.77 290 mΩ mΩ S 1 V 3 A 380 pF VGS=0V, VDS=30V, f=1MHz 54 VGS=0V, VDS=0V, f=1MHz 2.4 3.5 Ω 5.1 7 nC pF 24 VGS=10V, VDS=30V, ID=3.4A pF 2.3 nC 1.0 nC 1.2 nC 4 ns VGS=10V, VDS=30V, RL=8.8Ω, RGEN=3Ω 3.4 ns 14.4 ns 2.4 trr Body Diode Reverse Recovery Time IF=3.4A, dI/dt=100A/µs 30.2 Qrr Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 21.5 ns 45 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOP806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 6V 10V 12 4.5V 9 9 ID(A) 4V ID (A) VDS=5V 12 6 125°C 6 25°C 3.5V 3 3 0 0 0 1 2 3 4 5 1 2 VDS (Volts) Figure 1: On-Region Characteristics 200 4 5 Normalized On-Resistance 1.8 VGS=4.5V 170 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 140 110 VGS=10V 80 VGS=10V ID=3.4A 1.6 1.4 VGS=4.5V ID=2A 1.2 1 0.8 50 0 2 4 6 8 0.6 10 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 210 ID=3.4A 1.0E+01 180 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 150 120 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 90 25°C 1.0E-04 60 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOP806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=30V ID=3.4A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss 0 0 0 1 2 3 4 5 6 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 10.0 100µs RDS(ON) limited 1ms 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 10µs DC 30 20 10 10s 1s 0.1 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 30 50 TJ(Max)=150°C TA=25°C 0.1 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance Crss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com