Datasheet

AO4476
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4476/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
AO4476 and AO4476L are electrically identical.
-RoHS Compliant
-AO4476L is Halogen Free
VDS (V) = 30V
ID = 15A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 17mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current AF
TA=25°C
TA=70°C
IDSM
IDM
TA=25°C
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
±20
V
60
3.7
W
2.4
IAR
30
A
EAR
135
mJ
-55 to 150
°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
12
PD
TA=70°C
Repetitive avalanche energy 0.3mH
Units
V
15
Pulsed Drain Current B
Power Dissipation
B
Avalanche Current
Maximum
30
RθJA
RθJL
Typ
28
57
16
Max
34
71
23
Units
°C/W
°C/W
°C/W
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AO4476
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
14
VDS=5V, ID=15A
33
0.73
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=15A
µA
2.5
V
10.5
11
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
0.1
A
VGS=4.5V, ID=12A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Coss
2.1
8.5
TJ=125°C
Forward Transconductance
uA
5
VGS=10V, ID=15A
VSD
Units
V
1
Zero Gate Voltage Drain Current
gFS
Max
30
VDS=30V, VGS=0V
IDSS
IS
Typ
0.6
mΩ
mΩ
17
S
1.0
V
5
A
1000
1200
pF
340
408
pF
100
140
pF
1.3
2.0
Ω
18
23
nC
8.5
11
nC
3.1
nC
Gate Drain Charge
4.8
nC
Turn-On DelayTime
6
ns
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
3.8
ns
20
ns
3.8
ns
trr
Body Diode Reverse Recovery Time
IF=15A, dI/dt=100A/µs
28
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/µs
21
34
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev2: MAY 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
30
4.5V
50
7V
10V
40
20
4V
ID(A)
ID (A)
VDS=5V
25
30
20
15
125°
10
VGS=3.5V
10
25°C
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
1.6
15
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
18
VGS=4.5V
12
9
VGS=10V
6
0
5
10
15
VGS=10V
1.4
ID=15A
1.2
VGS=4.5
VGS=4.5
1
0.8
VGS=10V
0.6
20
25
30
-50
-20
10
40
70
100
130
160
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
1.0E+01
25
1.0E+00
ID=15A
125°C
1.0E-01
20
IS (A)
RDS(ON) (mΩ)
2
125°C
15
10
25°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
12
14
16
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4476
10
1500
8
1200
Capacitance (pF)
VGS (Volts)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VDS=15V
ID=15A
6
4
2
Ciss
900
600
Coss
300
0
0
5
10
15
Crss
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
140
120
10µs
100.0
100µ
10.0
10ms
RDS(ON)
limited
1.0
1m
DC
0.0
0.01
0.1
80
60
40
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=150°C
TA=25°C
100
Power (W)
ID (Amps)
5
20
1
VDS (Volts)
10
100
0
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note G)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=34°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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