AOSMD AON7406

AON7406
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON7406 uses advanced trench technology and
design to provide excellent R DS(ON) with low gate
charge. This device is suitable for use in SMPS and
general purpose applications. Standard Product
AON7406 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = 30V
(VGS = 10V)
ID = 11A
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 23.5mΩ (VGS = 4.5V)
DFN 3x3
Top View
Bottom View
D
S
S
S
G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B,H
Pulsed Drain Current
C
A
V
A
27
11
Junction and Storage Temperature Range
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
3.1
PDSM
TA=70°C
Alpha & Omega Semiconductor, Ltd.
±20
8.8
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
Units
V
50
IDSM
TA=25°C
Power Dissipation
Maximum
30
11
TA=70°C
B
S
20
TA=25°C
TC=25°C
Power Dissipation
G
20
ID
IDM
TC=100°C
Continuous Drain
Current G
D
D
D
D
RθJA
RθJC
Typ
30
60
4
°C
Max
40
75
4.5
Units
°C/W
°C/W
°C/W
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AON7406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
1
TJ=55°C
5
±100
nA
3
V
12.5
15
17.5
21
VGS=4.5V, ID=8.5A
19
23.5
VDS=5V, ID=10A
19
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
VGS=10V, ID=11A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
µA
1.6
Gate-Body leakage current
Output Capacitance
Units
V
VDS=30V, VGS=0V
IGSS
Coss
Max
30
VGS(th)
IS
Typ
A
0.73
955
VGS=0V, VDS=15V, f=1MHz
S
1
V
3
A
1200
pF
145
pF
112
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
mΩ
pF
0.5
0.85
Ω
17
24
nC
9
12
nC
3.4
nC
4.7
nC
5
ns
6
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=11A, dI/dt=100A/µs
19
Qrr
Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs
9
19
ns
4.5
ns
25
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
150
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
G.The maximum current rating is limited by bond-wires.
Rev1: Nov 2007
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
80
VDS=5V
10V
30
6.0V
5.0V
60
25
40
ID(A)
ID (A)
4.5V
4.0V
3.5V
VGS=3.0V
2
3
4
125°C
25°C
5
0
1
15
10
20
0
20
0
1.50
5
VDS (Volts)
Figure 1: On-Region Characteristics
2.50
3.00
3.50
4.00
4.50
VGS(Volts)
Figure 2: Transfer Characteristics
24
1.8
Normalized On-Resistance
22
VGS=4.5V
20
RDS(ON) (mΩ)
2.00
18
16
14
`VGS=10V
12
VGS=10V
ID=11A
1.6
1.4
VGS=4.5V
ID=8.5A
1.2
1
10
0
5
10
15
20
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
10
50
150
ID=11A
1
125°C
0.1
IS (A)
RDS(ON) (mΩ)
40
30
25°C
0.01
125°C
-40°C
0.001
20
0.0001
25°C
0.00001
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=11A
1250
Capacitance (pF)
VGS (Volts)
8
6
VDS=VGS ID=1mA
4
2
Ciss
1000
750
1.4
50
500
1.8
Coss
250
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
1ms
40
100µs
Power (W)
10.0
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
1
10
25
30
220
140
TJ(Max)=150°C
TA=25°C
20
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
20
15
7
30
0
0.0001
VDS (Volts)
10
15
10
10s
0.1
0.1
10
800
140
80
0.5
50
RDS(ON)
limited
ID (Amps)
5
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
ZθJA Normalized Transient
Thermal Resistance
Crss
0
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD NOT ASSUME ANY LIABILITY ARISING
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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