AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7406 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7406 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V (VGS = 10V) ID = 11A RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 23.5mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D S S S G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,H Pulsed Drain Current C A V A 27 11 Junction and Storage Temperature Range 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 3.1 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. ±20 8.8 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D Units V 50 IDSM TA=25°C Power Dissipation Maximum 30 11 TA=70°C B S 20 TA=25°C TC=25°C Power Dissipation G 20 ID IDM TC=100°C Continuous Drain Current G D D D D RθJA RθJC Typ 30 60 4 °C Max 40 75 4.5 Units °C/W °C/W °C/W www.aosmd.com AON7406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V 1 TJ=55°C 5 ±100 nA 3 V 12.5 15 17.5 21 VGS=4.5V, ID=8.5A 19 23.5 VDS=5V, ID=10A 19 VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 50 VGS=10V, ID=11A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time µA 1.6 Gate-Body leakage current Output Capacitance Units V VDS=30V, VGS=0V IGSS Coss Max 30 VGS(th) IS Typ A 0.73 955 VGS=0V, VDS=15V, f=1MHz S 1 V 3 A 1200 pF 145 pF 112 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω mΩ pF 0.5 0.85 Ω 17 24 nC 9 12 nC 3.4 nC 4.7 nC 5 ns 6 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11A, dI/dt=100A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs 9 19 ns 4.5 ns 25 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 150 curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. G.The maximum current rating is limited by bond-wires. Rev1: Nov 2007 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 80 VDS=5V 10V 30 6.0V 5.0V 60 25 40 ID(A) ID (A) 4.5V 4.0V 3.5V VGS=3.0V 2 3 4 125°C 25°C 5 0 1 15 10 20 0 20 0 1.50 5 VDS (Volts) Figure 1: On-Region Characteristics 2.50 3.00 3.50 4.00 4.50 VGS(Volts) Figure 2: Transfer Characteristics 24 1.8 Normalized On-Resistance 22 VGS=4.5V 20 RDS(ON) (mΩ) 2.00 18 16 14 `VGS=10V 12 VGS=10V ID=11A 1.6 1.4 VGS=4.5V ID=8.5A 1.2 1 10 0 5 10 15 20 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 50 150 ID=11A 1 125°C 0.1 IS (A) RDS(ON) (mΩ) 40 30 25°C 0.01 125°C -40°C 0.001 20 0.0001 25°C 0.00001 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=11A 1250 Capacitance (pF) VGS (Volts) 8 6 VDS=VGS ID=1mA 4 2 Ciss 1000 750 1.4 50 500 1.8 Coss 250 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 1ms 40 100µs Power (W) 10.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 25 30 220 140 TJ(Max)=150°C TA=25°C 20 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 20 15 7 30 0 0.0001 VDS (Volts) 10 15 10 10s 0.1 0.1 10 800 140 80 0.5 50 RDS(ON) limited ID (Amps) 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance Crss 0 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD NOT ASSUME ANY LIABILITY ARISING COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com