AON3812 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3812 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) D2 D1 DFN 3x3 Top View Bottom View S2 G2 D2 G1 D2 S1 D1 D1 G1 1.6KΩ G2 1.6KΩ S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C F Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 30 2.2 W 1.4 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 5.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 43 77 35 Max 56 95 50 Units °C/W °C/W °C/W www.aosmd.com AON3812 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C 33 40 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance 24 mΩ S 0.76 330 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V 27 31 VGS=2.5V, ID=5.4A VDS=5V, ID=6A µA A 30 Forward Transconductance Crss 1.5 25 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 0.8 VGS=4.5V, ID=6A VSD µA V 22 TJ=125°C gFS Coss 5 10 VGS=10V, ID=6A Static Drain-Source On-Resistance Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current IS Max 30 IDSS RDS(ON) Typ 1 V 2.5 A 400 pF VGS=0V, VDS=15V, f=1MHz 80 pF 10 VGS=0V, VDS=0V, f=1MHz 1.6 pF kΩ 6.4 nC 3.1 nC VGS=4.5V, VDS=15V, ID=6A Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 388 ns tr Turn-On Rise Time 992 tD(off) Turn-Off DelayTime 2.7 ns µs tf Turn-Off Fall Time 1.9 µs trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs, VGS=-9V 26.5 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs, VGS=-9V 30.8 ns nC VGS=4.5V, VDS=15V, RL=2.5Ω, RGEN=3Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The max current rating is limited by bonding wires. Rev 1: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 VDS=5V 10V 25 3.5V 20 20 ID(A) ID(A) 2.5V VGS =2V 10 15 125°C 25°C 10 5 -40°C 0 0 0 1 2 3 4 5 0.0 0.5 VDS(Volts) 50 Normalize ON-Resistance RDS(ON)(mΩ) 2.5 3.0 VGS=4.5V VGS =4.5V 30 20 VGS =10V 10 0 5 2.0 1.6 VGS =2.5V 0 1.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 40 1.0 10 15 ID=6A 1.4 VGS=2.5V ID=5.4 1.2 VGS=10V 1.0 ID=6A 0.8 20 0.6 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=6A 1E+00 125°C 1E-01 125°C 40 IS(A) RDS(ON)(mΩ) 50 30 25°C 1E-02 1E-03 -40°C 25°C 20 1E-04 1E-05 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON3812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=6A Capacitance (pF) VGS(Volts) 4 Ciss 350 3 2 300 250 200 150 Coss 100 1 Crss 50 0 0 0 2 4 6 0 8 5 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 TJ(Max)=150°C, T A=25°C 80 TJ(Max)=150°C TA=25°C 70 100µs 10µs 60 10 Power (W) ID (Amps) 1ms 100m 10s RDS(ON) limited 1 50 40 30 20 DC 10ms 10 0 0.0001 0.1 0.1 1 10 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=56°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com