AOD408 - Alpha & Omega Semiconductor

AOD408
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD408 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Standard Product AOD408 is Pb-free (meets ROHS &
Sony 259 specifications).
VDS (V) = 30V
ID = 18A (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
C
Avalanche Current C
C
TC=25°C
Power Dissipation
B
TC=100°C
Power Dissipation
A
TA=70°C
Units
V
±20
V
18
TC=100°C
Repetitive avalanche energy L=0.1mH
Maximum
30
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
A
ID
IDM
18
IAR
18
A
EAR
40
mJ
70
60
PD
2.5
PDSM
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
30
RθJA
RθJC
Typ
16.7
40
1.9
°C
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
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AOD408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
Typ
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
70
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A
TJ=125°C
VGS=4.5V, ID=10A
Forward Transconductance
VSD
IS
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
ISM
Pulsed Body-Diode Current
VDS=5V, ID=18A
1.8
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
nA
2.5
V
18
18
24
20.6
27
mΩ
1
V
18
A
70
A
1250
pF
25
0.75
pF
110
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=18A
pF
0.85
Ω
19.8
25
nC
9.8
12.5
nC
0.7
2.5
nC
3.5
nC
4.5
ns
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=18A, dI/dt=100A/µs
19
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
8
VGS=10V, VDS=15V, RL=0.82Ω,
RGEN=3Ω
mΩ
S
180
tD(on)
Body Diode Reverse Recovery Time
100
13.6
1040
VGS=0V, VDS=15V, f=1MHz
µA
A
C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Units
V
VDS=24V, VGS=0V
gFS
Max
3.9
ns
17.4
ns
3.2
ns
25
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 5: Dec.2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
20
10V
60
6V
4.5V
12
40
ID(A)
ID (A)
VDS=5V
16
50
30
125°C
8
3.5V
25°C
20
4
VGS=3V
10
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
24
1.6
VGS=4.5V
VGS=10V
Normalized On-Resistance
22
RDS(ON) (mΩ)
2.5
20
18
16
VGS=10V
14
12
10
0
5
10
15
20
ID=18A
1.4
VGS=4.5V
1.2
1
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
1.0E+01
1.0E+00
1.0E-01
ID=18A
IS (A)
RDS(ON) (mΩ)
40
30
125°C
1.0E-02
25°C
125°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=18A
1250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
750
500
2
Coss
0
0
0
4
8
12
16
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
1.00
1s
10ms
0.1s
10s
DC
T J(Max)=150°C
T A=25°C
0.10
1
10
100
VDS (Volts)
1
30
30
20
0
0.001
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
25
10
0.01
0.1
20
T J(Max)=150°C
T A=25°C
40
Power (W)
ID (Amps)
RDS(ON)
limited
15
50
10µs
1ms
10.00
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
ZθJA Normalized Transient
Thermal Resistance
Crss
250
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
T on
Single Pulse
0.001
0.00001
0.0001
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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