AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Units V ±20 V 18 TC=100°C Repetitive avalanche energy L=0.1mH Maximum 30 TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. A ID IDM 18 IAR 18 A EAR 40 mJ 70 60 PD 2.5 PDSM W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 30 RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W www.aosmd.com AOD408 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 Typ 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 70 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A TJ=125°C VGS=4.5V, ID=10A Forward Transconductance VSD IS Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current ISM Pulsed Body-Diode Current VDS=5V, ID=18A 1.8 Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge nA 2.5 V 18 18 24 20.6 27 mΩ 1 V 18 A 70 A 1250 pF 25 0.75 pF 110 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A pF 0.85 Ω 19.8 25 nC 9.8 12.5 nC 0.7 2.5 nC 3.5 nC 4.5 ns Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=18A, dI/dt=100A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs 8 VGS=10V, VDS=15V, RL=0.82Ω, RGEN=3Ω mΩ S 180 tD(on) Body Diode Reverse Recovery Time 100 13.6 1040 VGS=0V, VDS=15V, f=1MHz µA A C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Units V VDS=24V, VGS=0V gFS Max 3.9 ns 17.4 ns 3.2 ns 25 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 5: Dec.2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 20 10V 60 6V 4.5V 12 40 ID(A) ID (A) VDS=5V 16 50 30 125°C 8 3.5V 25°C 20 4 VGS=3V 10 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 24 1.6 VGS=4.5V VGS=10V Normalized On-Resistance 22 RDS(ON) (mΩ) 2.5 20 18 16 VGS=10V 14 12 10 0 5 10 15 20 ID=18A 1.4 VGS=4.5V 1.2 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 1.0E-01 ID=18A IS (A) RDS(ON) (mΩ) 40 30 125°C 1.0E-02 25°C 125°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=18A 1250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 1000 750 500 2 Coss 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 1.00 1s 10ms 0.1s 10s DC T J(Max)=150°C T A=25°C 0.10 1 10 100 VDS (Volts) 1 30 30 20 0 0.001 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 25 10 0.01 0.1 20 T J(Max)=150°C T A=25°C 40 Power (W) ID (Amps) RDS(ON) limited 15 50 10µs 1ms 10.00 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.00 ZθJA Normalized Transient Thermal Resistance Crss 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 T on Single Pulse 0.001 0.00001 0.0001 T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com