AOSMD AON7422

AON7422
N-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AON7422 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
VDS
30V
32A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.6mΩ
RDS(ON) (at VGS = 4.5V)
< 6mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3
Top View
D
Bottom View
Top View
S
S
S
G
Pin 1
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
TC=100°C
C
TA=25°C
TA=70°C
Maximum
30
Units
V
±20
V
ID
32
IDM
150
IDSM
15
A
25
A
11
Avalanche Current C
IAR
47
A
Repetitive avalanche energy L=0.1mH C
EAR
110
mJ
PD
35
TC=25°C
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: February 2009
1.7
PDSM
TA=70°C
Steady-State
Steady-State
RθJA
RθJC
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W
1
TJ, TSTG
Symbol
t ≤ 10s
W
14
°C
-55 to 150
Typ
30
60
3
Max
40
75
3.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7422
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.2
VGS=10V, VDS=5V
150
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
µA
100
nA
1.75
2.3
V
3.8
4.6
5.3
6.4
4.7
6
mΩ
1
V
40
A
A
100
0.68
mΩ
S
1900
2400
2900
pF
260
370
480
pF
150
245
340
pF
0.5
1
1.5
Ω
35
44
53
nC
16
20
24
nC
5.6
7
8.4
nC
5.4
9
12.6
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VGS(th)
ID(ON)
RDS(ON)
Typ
8
ns
9
ns
36
ns
9
ns
9
12
14
21
26
31
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
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Page 2 of 6
AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
150
10V
6V
80
3.5V
90
60
ID(A)
ID (A)
VDS=5V
4V
120
40
60
VGS=3V
30
20
0
25°C
2
3
0
0
1
2
3
4
5
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
Normalized On-Resistance
1.6
VGS=4.5V
5
RDS(ON) (mΩ)
125°C
4
VGS=10V
3
VGS=10V
ID=20A
1.4
17
5
2
VGS=4.5V10
1.2
1
ID=20A
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
8
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
6
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
4
1.0E-04
25°C
1.0E-05
2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
VDS=15V
ID=20A
3000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
1000
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
10µs
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
1ms
10ms
DC
1.0
0.1
TJ(Max)=150°C
TC=25°C
0.0
0.01
160
10µs
RDS(ON)
limited
Power (W)
100.0
10.0
5
30
200
1000.0
10
1
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.1
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
Coss
500
0
ID (Amps)
2500
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2009
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Page 4 of 6
AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
TA=25°C
120
100
35
Power Dissipation (W)
IAR (A) Peak Avalanche Current
140
TA=150°C
TA=100°C
80
60
40
TA=125°C
20
30
25
20
15
10
5
0
0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
125
150
10000
35
TA=25°C
30
1000
25
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
20
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
150
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2009
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Page 5 of 6
AON7422
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: February 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6