AUK SI5315-CB

SI5315-C / SI5315-C(B)
Semiconductor
IRED
Features
• Colorless transparency lens type
• φ5mm(T-13/4) all plastic mold type
• Low power consumption
Applications
• Infrared remote control and free air transmission systems with low forward voltage and
comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions
unit : mm
STRAIGHT TYPE
STOPPER TYPE
5.0±0.2
5.0±0.2
0.8±0.2
8.6±0.2
0.8±0.2
3.4±0.2
3.4±0.2
0.5
23.0 MIN
2.54NOM
1.0 MIN
1.0 MIN
0.5
8.6±0.2
23.0 MIN
2.54NOM
1
2
5.8
1
2
5.8
PIN Connections
1.Cathode
2.Anode
KLI-0002-000
1
SI5315-C / SI5315-C(B)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Power Dissipation
PD
150
mW
Forward Current
IF
100
mA
IFP
1
A
Reverse Voltage
VR
4
V
Operating Temperature
Topr
-25~85
℃
Storage Temperature
Tstg
-30~100
℃
Tsol
260℃ for 5 seconds
1
* Peak Forward Current
2
* Soldering Temperature
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward Voltage
VF
IF= 50mA
-
1.4
1.8
V
Radiant Intensity
IE
IF= 50mA
10
25
-
mW/Sr
Peak Wavelength
λP
Δλ
IR
IF= 50mA
-
880
-
nm
IF= 50mA
-
50
-
nm
VR=4V
-
-
10
uA
θ /2
IF= 50mA
-
±20
-
deg
Spectrum Bandwidth
Reverse Current
3
* Half angle
1
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-0002-000
2
SI5315-C / SI5315-C(B)
Characteristic Diagrams
Fig. 2 IV - IF
Forward Current IF [mA]
Radiant Intensity IE [mW/Sr]
Fig. 1 IF - VF
Forward Voltage VF [V]
Forward Current IF [mA]
Fig.4 Spectrum Distribution
Relative Intensity [%]
Forward Current IF [mA]
Fig. 3 IF – Ta
Wavelength λ [nm]
Ambient Temperature Ta [℃]
Fig. 5 Radiation Diagram
Relative Radiant Intensity IE [%]
KLI-0002-000
3