SI5315-H / SI5315-H(B) Semiconductor IRED Features • • • • Colorless transparency lens type φ5mm(T-13/4) all plastic mold type Low power consumption High radiant intensity Applications • Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE 5.0±0.2 5.0±0.2 8.6±0.2 8.6±0.2 0.8±0.2 0.8±0.2 3.4±0.5 0.5 0.5 23.0 MIN 23.0 MIN 1.0 MIN 2.54 NOM 1.0 MIN 2.54 NOM 1 2 5.8±0.2 1 2 5.8±0.2 PIN Connections 1.Anode 2.Cathode KLI-8006-001 1 SI5315-H / SI5315-H(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 150 mW Forward Current IF 100 mA IFP 1 A Reverse Voltage VR 4 V Operating Temperature Topr -25～85 ℃ Storage Temperature Tstg -30～100 ℃ Tsol 260℃ for 5 seconds 1 * Peak Forward Current 2 * Soldering Temperature *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 50mA - 1.3 1.7 V Radiant Intensity IE IF= 50mA 20 40 - mW/Sr Peak Wavelength λP Δλ IR IF= 50mA - 950 - nm IF= 50mA - 50 - nm VR=4V - - 10 uA θ /2 IF= 50mA - ±20 - deg Spectrum Bandwidth Reverse Current 3 * Half angle 1 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-8006-001 2 SI5315-H / SI5315-H(B) Characteristic Diagrams Fig. 2 IE - IF Forward Current IF [mA] Radiant Intensity IE [mW/Sr] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Relative Intensity [%] Forward Current IF [mA] Fig. 3 IF – Ta Wavelength λ [nm] Ambient Temperature Ta [℃] Fig. 5 Radiation Diagram Relative Radiant Intensity IE [%] KLI-8006-001 3