SI5315-DS/SI5315-DS(B) Semiconductor High Speed IRED Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type • Low power consumption • High power, High speed type Applications • Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions unit : mm STRAIGHT TYPE STOPPER 5.0±0.2 TYPE 5.0±0.2 0.8±0.2 8.6±0.2 0.8±0.2 3.4±0.2 0.5 8.6±0.2 3.4±0.2 0.5 23.0 MIN 1.0 MIN 1.0 MIN 23.0 MIN 2.54NOM 2.54NOM 1 2 5.8 1 2 5.8 PIN Connections 1. Cathode 2. Anode KLI-0005-000 1 SI5315-DS/SI5315-DS(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 150 mW Forward Current IF 100 mA IFP 1 A Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 50mA - 1.5 2.0 V Radiant Intensity IE IF= 50mA 30 70 - mW/Sr Peak Wavelength λP Δλ tr IR IF= 50mA - 875 - nm IF= 50mA - 45 - nm IF= 50mA - 15 - ns VR=4V - - 10 uA θ /2 IF= 50mA - ±20 - deg Spectrum Bandwidth Rise Time Reverse Current 3 * Half angle 1 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-0005-000 2 SI5315-DS / SI5315-DS(B) Characteristic Diagrams Fig. 2 IE - IF Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF – Ta Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Radiant Intensity IE [%] KLI-0005-000 3