TI UA592

UA592
MuA592 Differential Video Amplifier
Literature Number: SNOS252A
mA592 Differential Video Amplifier
General Description
Features
The mA592 is a monolithic two-stage differential input, differential output video amplifier constructed using the Planar
Epitaxial process. Internal series shunt feedback is used to
obtain wide bandwidth, low phase distortion, and excellent
gain stability. Emitter follower outputs enable the device to
drive capacitive loads and all stages are current source biased to obtain high power supply and common mode rejection ratios.
The mA592, in the 14-lead version, offers fixed gains of 100
and 400 without external components. A fixed gain of 400 is
available in the 8-lead part. Adjustable gains from 0 to 400
are obtained with one external resistor.
No external frequency compensation components are required for any gain option. The device is particularly useful in
magnetic tape or disc file systems using phase or NRZ encoding. Other applications include general purpose video
and pulse amplifiers.
Y
Y
Y
et
e
Y
90 MHz bandwidth typ
Selectable gains from 0 to 400 typ
No frequency compensation required
Adjustable pass band
Connection Diagrams
8-Lead DIP and SO-8 Package
ol
14-Lead DIP
TL/H/10047 – 1
bs
Top View
Order Number mA592SC or mA592TC
See NS Package Number M08E or N08E
TL/H/10047 – 2
Top View
Order Number mA592DC or mA592DM
See NS Package Number J14A
O
Order Information
Device
Code
Package
Code
Package
Description
mA592TC
mA592SC
mA592DM
mA592DC
N08E
M08A
J14A
J14A
Molded DIP
Molded Surface Mount
Ceramic DIP
Ceramic DIP
C1995 National Semiconductor Corporation
TL/H/10047
RRD-B30M115/Printed in U. S. A.
mA592 Differential Video Amplifier
March 1989
Absolute Maximum Ratings
b 65§ C to a 175§ C
b 65§ C to a 150§ C
Internal Power Dissipation (Notes 1, 2)
8L-Molded DIP
SO-8
14L-Molded DIP
14L-Ceramic DIP
Supply Voltage
b 55§ C to a 125§ C
0§ C to a 70§ C
Differential Input Voltage
Common Mode Input Voltage
Output Current
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature Range
Ceramic DIP
Molded DIP, SO-8
Operating Temperature Range
Extended (mA592M)
Commercial (mA592C)
Lead Temperature
Ceramic DIP (Soldering, 60 sec.)
Molded DIP and SO Package
(Soldering, 10 sec.)
0.93W
0.81W
1.04W
1.36W
g 8.0V
g 5.0V
g 6.0V
10 mA
300§ C
265§ C
mA592 and mA592C
Electrical Characteristics TA e 25§ C, VCC e g 6.0V unless otherwise specified.
BW
tr
tPD
ZI
mA592
Conditions
(Notes 3, 4)
Min
Typ
mA592C
Max
Min
Typ
Units
Max
Differential Voltage
Gain
RL e 2.0 kX,
VO e 3.0 VP – P
Gain 1
300
400
500
250
400
600
Gain 2
90
100
110
80
100
120
Bandwidth
RS e 50X
Gain 1
40
40
Gain 2
90
90
RS e 50X,
VO e 1.0 VP – P
Gain 1
10.5
Gain 2
4.5
RS e 50X,
VO e 1.0 VP – P
Gain 1
7.5
Gain 2
6.0
Risetime
Propagation Delay
Input Impedance
Gain 1
Gain 2
Input Capacitance
IIO
Input Offset Current
IIB
Input Bias Current
en
Input Noise Voltage
Gain 2
4.5
ns
12
7.5
10
6.0
30
10
2.0
RS e 50X,
BW e 1.0 kHz to 10 MHz
MHz
10.5
10
4.0
20
bs
CI
V/V
et
e
AVD
Parameter
ol
Symbol
ns
10
4.0
kX
30
2.0
pF
0.4
3.0
0.4
5.0
mA
9.0
20
9.0
30
mA
12
mVrms
Input Voltage Range
CMR
Common Mode Rejection
VCM e 1.0V, Gain 2
60
86
60
86
dB
PSRR
Power Supply
Rejection Ratio
DVCC e g 0.5V, Gain 2
50
70
50
70
dB
VOCM
O
VIR
VOO
g 1.0
12
Output Offset Voltage
g 1.0
V
Gain 1
0.6
1.5
0.6
1.5
Gain 2
0.35
0.75
0.35
0.75
3.4
2.4
2.9
3.4
V
Output Common
Mode Voltage
2.4
2.9
VOP
Output Voltage Swing
3.0
4.0
3.0
4.0
VP – P
IO b
Output Sink Current
2.5
3.6
2.5
3.6
mA
RO
Output Resistance
20
ICC
Supply Current
18
20
24
18
V
X
24
mA
Note 1: TJ Max e 150§ C for the Molded DIP and SOIC, and 175§ C for the Ceramic DIP.
Note 2: Ratings apply to ambient temperature at 25§ C. Above this temperature, derate the 8L-Molded DIP at 7.5 mW/§ C, the SO-8 at 6.5 mW/§ C, the 14L-Molded
DIP at 8.3 mW/§ C, and the 14L-Ceramic DIP at 9.1 mW/§ C.
Note 3: Gain Select leads G1A and G1B connected together for Gain 1 and Gain Select leads G2A and G2B connected together for Gain 2.
Note 4: Gain 2 not applicable to 8 lead device.
2
ol
et
e
Equivalent Circuit
O
bs
Note 1: G2A and G2B applies to 14 lead device only.
3
TL/H/10047 – 3
Typical Performance Curves
Phase Shift vs
Frequency
Voltage Gain vs
Frequency
Common Mode Rejection
Ratio vs Frequency
Output Voltage Swing
vs Frequency
Pulse Response
Differential Overdrive
Recovery Time
Pulse Response
vs Supply Voltage
et
e
Phase Shift vs
Frequency
O
bs
ol
Pulse Response
vs Temperature
Voltage Gain
vs Temperature
Gain vs Frequency
vs Temperature
Voltage Gain
vs Supply Voltage
TL/H/10047 – 4
4
Typical Performance Curves (Continued)
Output Voltage and Current
Swing vs Supply Voltage
Input Noise Voltage
vs Source Resistance
Voltage Gain vs RADJ
Supply Current
vs Temperature
et
e
Output Voltage Swing
vs Load Resistance
Voltage Gain Adjust Circuit
TL/H/10047 – 5
O
bs
ol
Supply Current
vs Supply Voltage
5
TL/H/10047 – 6
6
ol
bs
O
et
e
et
e
Physical Dimensions inches (millimeters)
O
bs
ol
14-Lead Ceramic Dual-In-Line Package (J)
Order Number mA592DC or mA592DM
NS Package Number J14A
8-Lead Molded Surface Mount (M)
Order Number mA592SC
NS Package Number M08A
7
et
e
bs
ol
8-Lead Molded Dual-In-Line Package (N)
Order Number mA592TC
NS Package Number N08E
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SEMICONDUCTOR CORPORATION. As used herein:
O
mA592 Differential Video Amplifier
Physical Dimensions inches (millimeters) (Continued)
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