CHENMKO ENTERPRISE CO.,LTD CHT84N1PT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts CURRENT 0.13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. 0.5±0.05 1.0±0.05 0.37(REF.) 1.0±0.05 0.25(REF.) CONSTRUCTION 0.05±0.04 * P-Channel Enhancement 0.68±0.05 0.42±0.05 3 CIRCUIT D 0.3±0.05 0.26±0.05 1 G 2S Absolute Maximum Ratings Dimensions in millimeters FBPT-923 CHT84N1PT Units TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage - Continuous ±20 V ID Maximum Drain Current - Continuous -0.13 A PD Maximum Power Dissipation 100 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 417 °C/W 2006-07 RATING CHARACTERISTIC CURVES ( CHT84N1PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -50 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V -15 V µA VDS = -25 V, VGS = 0 V -100 nA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -10 nA -2.0 V 10 Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A gFS Forward Transconductance VDS = VGS, ID = 1.0 µA VDS = -25 V , ID = 1000 m A -0.8 0.05 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = -25 V, VGS = 0 V, f = 1.0 MHz 45 pF 25 12 VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 Ω 10 18 nS RATING CHARACTERISTIC CURVES ( CHT84N1PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Temperature 15 500 R DS(ON) , NORMALIZED VGS = 5V 400 4.5V 300 3.5V 200 3.0V 100 2.5V 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 600 12 V GS =-10V 9.0 I D = -130m A 6.0 3.0 0 -5 0 -2 5 0 25 50 75 100 T J , JUNCTION T EMPERATURE (°C) 125 150