CHENMKO ENTERPRISE CO.,LTD CHT84PT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts CURRENT 0.13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .019 (0.50) .066 (1.70) .110 (2.80) .082 (2.10) (1) .119 (3.04) * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High density cell design for low R DS(ON). * Suitable for high packing density. .018 (0.30) FEATURE (3) (2) CONSTRUCTION 3 CIRCUIT D .103 (2.64) .086 (2.20) .045 (1.15) .033 (0.85) .002 (0.05) MARKING * ZT .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) * P-Channel Enhancement 1 G Dimensions in inches and (millimeters) 2S Absolute Maximum Ratings SOT-23 TA = 25°C unless otherwise noted CHT84PT Symbol Parameter Units VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage - Continuous ±20 V ID Maximum Drain Current - Continuous -0.13 A PD Maximum Power Dissipation 300 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 417 °C/W 2004-03 RATING CHARACTERISTIC CURVES ( CHT84PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -50 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V -15 V µA VDS = -25 V, VGS = 0 V -100 nA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -10 nA -2.0 V 10 Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A gFS Forward Transconductance VDS = VGS, ID = 1.0 mA VDS = -25 V , ID = 100 m A -0.8 0.05 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = -25 V, VGS = 0 V, f = 1.0 MHz 45 pF 25 12 VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 Ω 10 18 nS RATING CHARACTERISTIC CURVES ( CHT84PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Temperature 15 500 R DS(ON) , NORMALIZED VGS = 5V 400 4.5V 300 3.5V 200 3.0V 100 2.5V 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 600 12 V GS =-10V 9.0 I D = -130m A 6.0 3.0 0 -5 0 -2 5 0 25 50 75 100 T J , JUNCTION T EMPERATURE (°C) 125 150