CHENMKO CHM9535JPT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
CHM9535JPT
CURRENT 5 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
* Lead free product is acquired.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* P-Channel Enhancement
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
1
D D
D
D
S S
S
G
5
6.20 (0.244)
5.80 (0.228)
Dimensions in millimeters
4
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
SO-8
TA = 25°C unless otherwise noted
Parameter
CHM9535JPT
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
-5.0
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
-20
2500
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
50
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2006-02
RATING CHARACTERISTIC CURVES ( CHM9535JPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
-30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -30 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
-1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = -250 µA
-3
-1
VGS=-10V, ID=-5A
50
60
VGS=-4.5V, ID=-4A
70
95
VDS = -15V, ID = -5A
V
mΩ
S
3
Dynamic Characteristics
Ciss
552
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1.0 MHz
91
pF
61
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=-15V, ID=-5A
VGS=-10V
9.5
12.5
nC
3.4
1.7
t on
Turn-On Time
tr
Rise Time
I D = -1A , VGS = -10 V
t off
Turn-Off Time
RGEN= 6 Ω
tf
Fall Time
V DD= -15V
11
22
3
8
23
45
4
10
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = -5.0A , VGS = 0 V (Note 2)
(Note 1)
-5.0
A
-1.3
V